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AO4928 Dataheets PDF



Part Number AO4928
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet AO4928 DatasheetAO4928 Datasheet (PDF)

SRFET AO4928 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor TM General Description The AO4928 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in www.DataSheet4U.com parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4928 is Pb-free (meets ROHS & S.

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SRFET AO4928 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor TM General Description The AO4928 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in www.DataSheet4U.com parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4928 is Pb-free (meets ROHS & Sony 259 specifications). AO4928L is a Green Product ordering option. AO4928L and AO4928 are electrically identical. SOIC-8 Features FET1 VDS (V) = 30V ID = 9A RDS(ON) < 16mΩ RDS(ON) < 19.5mΩ FET2 V DS(V) = 30V I D=7.3A (V GS = 10V) <24m Ω (V GS = 10V) <29mΩ (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Max FET1 Parameter VDS 30 Drain-Source Voltage VGS Gate-Source Voltage ±12 Continuous Drain Current A Pulsed Drain Current B Avalanche Current C C Max FET2 30 ±12 7.3 5.9 40 12 22 2.0 1.3 -55 to 150 Units V V A TA=25°C TA=70°C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25°C 9.0 7.2 40 16 38 2.0 1.3 -55 to 150 A mJ W °C Repetitive avalanche energy L=0.3mH Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics FET1 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Thermal Characteristics FET2 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4928 FET1 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=7A VDS=5V, ID=9A Forward Transconductance Conditions ID=250 µA, VGS=0V VDS=24V, V GS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250 µA VGS=4.5V, VDS=5V VGS=10V, ID=9A TJ=125°C www.DataSheet4U.com Min 30 Typ Max Units V 0.01 5 1.5 40 13.2 20.5 15.7 64 0.4 1.85 0.1 10 0.1 2.4 16 25.6 19.5 0.6 4.5 mA µA V A mΩ mΩ S V A pF pF pF IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=15V, f=1MHz 1450 224 92 1.6 24.0 VGS=10V, V DS=15V, ID=9A 12.0 3.9 4.2 5.5 VGS=10V, V DS=15V, R L=1.7Ω, RGEN=3Ω IF=9A, dI/dt=300A/ µs IF=9A, dI/dt=300A/ µs 4.7 24.0 4.0 10 6.8 1885 3 31 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge nC nC nC ns ns ns ns 13 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0:Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4928 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 60 ID (A) ID(A) 15 10 20 0 www.DataSheet4U.com 0 VGS=3V 5 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 45 40 35 RDS(ON) (mΩ ) IS (A) 30 25 20 15 10 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125°C ID=9A 1.0E+02 1.0E+01 1.0E+00 1.0E-01.


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