N-Channel MOSFET. AO4932 Datasheet

AO4932 MOSFET. Datasheet pdf. Equivalent

AO4932 Datasheet
Recommendation AO4932 Datasheet
Part AO4932
Description Asymmetric Dual N-Channel MOSFET
Feature AO4932; AO4932 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4932 u.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO4932 Datasheet




Alpha & Omega Semiconductors AO4932
AO4932
Asymmetric Dual N-Channel MOSFET
SRFET TM
General Description
Product Summary
The AO4932 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further.
FET1(N-Channel)
VDS= 30V
ID= 11A (VGS=10V)
RDS(ON)
< 12.5m(VGS=10V)
< 15m(VGS=4.5V)
FET2(N-Channel)
30V
8A (VGS=10V)
RDS(ON)
< 19m(VGS=10V)
< 23m(VGS=4.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D1
D2 G2
D2 S2/D1
G1 S2/D1
S1 S2/D1
G1 G2
Pin1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FE1
Max FET2
Drain-Source Voltage
VDS 30
30
Gate-Source Voltage
VGS ±12
±20
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
11
9
60
15
11
8
6.5
40
19
18
TA=25°C
Power Dissipation B TA=70°C
22
PD 1.3 1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: Nov 2011
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Page 1 of 9



Alpha & Omega Semiconductors AO4932
AO4932
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=1mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=11A
VGS=4.5V, ID=9A
Forward Transconductance
VDS=5V, ID=11A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode + Schottky Continuous Current
TJ=125°C
TJ=125°C
30
1.1
60
0.5
500
100
1.65 2.1
10 12.5
15 18
12 15
75
0.4 0.7
4
V
mA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
930 1170 1400
90 128 170
45 89 125
0.7 1.4 2.1
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16 20 24
nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=11A
7 8.7 10.5 nC
3.2 nC
Qgd Gate Drain Charge
3 nC
tD(on)
Turn-On DelayTime
6 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.4, 2.4 ns
tD(off)
Turn-Off DelayTime
RGEN=3
23 ns
tf Turn-Off Fall Time
4 ns
trr Body Diode Reverse Recovery Time IF=11A, dI/dt=500A/µs
5.5 7 8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs
5 6.5 8
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Nov. 2011
www.aosmd.com
Page 2 of 9



Alpha & Omega Semiconductors AO4932
AO4932
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
10V
30 4.5V
3V
25
2.75V
20
15 2.5V
10
5 VGS=2.25V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
35
VDS=5V
30
25
20
125°C
15
10 25°C
5
0
1.5 1.8 2.1 2.4 2.7
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
3
14
VGS=4.5V
12
10
VGS=10V
8
1.8
1.6
VGS=10V
ID=11A
1.4 17
VGS=4.5V5
1.2 ID=9A 2
10
1
6
5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistan(cNeotves.EJ) unction18Temperature
25
ID=11A
20
125°C
15
10
25°C
5
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
25°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 4: Nov. 2011
www.aosmd.com
Page 3 of 9







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