AO4932

AO4932 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. FET1(N-Channel) VDS= 30V ID= 11A (VGS=10V) RDS(ON) < 12.5mΩ (VGS=10V) < 15mΩ (VGS=4.5V) FET2(N-Channel) 30V 8A (VGS=10V) RDS(ON) < 19mΩ (VGS=10V) < 23mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D1 D2 G2 D2 S2/D1 G1 S2/D1 S1 S2/D1 G1 G2 Pin1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max FE1 Max FET2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±12 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR 11 9 60 15 11 8 6.5 40 19 18 TA=25°C Power Dissipation B TA=70°C 22 PD 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/...