Power MOSFET
AUTOMOTIVE GRADE
PD - 95962
Features
O O O O O O O
Advanced Process Technology Ultra Low On-Resistance 175°C Operatin...
Description
AUTOMOTIVE GRADE
PD - 95962
Features
O O O O O O O
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
HEXFET® Power MOSFET
D
AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL
60V 8.5mΩ 84A 75A
D
V(BR)DSS RDS(on) max. ID (Silicon Limited)
G S
ID (Package Limited)
D
Description www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings
D
G
D
S
TO-220AB AUIRF1010EZ
S D G D2Pak AUIRF1010EZS
S D G TO-262 AUIRF1010EZL
G Gate
D Drain
S Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted...
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