AUIRF1324

PD - 97482 AUTOMOTIVE GRADE Features l l l l l l l AUIRF1324 VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 1.2m: 1.5m: 353A 195A HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S c Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve www.DataSheet4U.com extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G Description S D G TO-220AB AUIRF1324 D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise speci...