Power MOSFET
PD - 97451
AUTOMOTIVE GRADE
AUIRFR3710Z
HEXFET® Power MOSFET
Features
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Advanced Process Technology Ultr...
Description
PD - 97451
AUTOMOTIVE GRADE
AUIRFR3710Z
HEXFET® Power MOSFET
Features
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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V(BR)DSS RDS(on) max. ID (Silicon Limited)
100V 18mΩ 56A 42A
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ID (Package Limited)
www.DataSheet4U.com
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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D-Pak AUIRFR3710Z
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Gate
Drain
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Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise speci...
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