SSM9510GM

SSM9510GM N- and P-channel Enhancement-mode Power MOSFETs Simple drive requirement Lower gate charge Fast switching characteristics Pb-free; RoHS compliant. D2 D1 D2 D1 D1 D1 D2 N-CH BV DSS R DS(ON) ID G2 G2 S2 G1 S2 S1 G1 S1 30V 28mΩ 6.9A -30V 55mΩ -5.3A D1 D2 P-CH BVDSS RDS(ON) ID SO-8 DESCRIPTION www.DataSheet4U.com Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G1 The SSM9510GM is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications. It is well suited for low voltage applications requiring complementary N and P MOSFETs. G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 6.9 5.5 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -5.3 -4.2 -30 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 2/10/2005 Rev.2.01 www.SiliconStandard.com 1 of 8 SSM9510GM N-channel Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 Test C...