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Power MOSFETs. SSM9510GM Datasheet

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Power MOSFETs. SSM9510GM Datasheet






SSM9510GM MOSFETs. Datasheet pdf. Equivalent




SSM9510GM MOSFETs. Datasheet pdf. Equivalent





Part

SSM9510GM

Description

N- and P-channel Enhancement-mode Power MOSFETs



Feature


SSM9510GM N- and P-channel Enhancement-m ode Power MOSFETs Simple drive require ment Lower gate charge Fast switching c haracteristics Pb-free; RoHS compliant. D2 D1 D2 D1 D1 D1 D2 N-CH BV DSS R D S(ON) ID G2 G2 S2 G1 S2 S1 G1 S1 30V 2 8mΩ 6.9A -30V 55mΩ -5.3A D1 D2 P-C H BVDSS RDS(ON) ID SO-8 DESCRIPTION w ww.DataSheet4U.com Advanced Power MOSF ETs from Silicon Stand.
Manufacture

Silicon Standard

Datasheet
Download SSM9510GM Datasheet


Silicon Standard SSM9510GM

SSM9510GM; ard provide the designer with the best c ombination of fast switching, ruggedize d device design, low on-resistance and cost-effectiveness. G1 The SSM9510GM i s in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications. It is well suited for low voltage applications re quiring complementary N and P MOSFETs. G2 S1 S2 ABSOLUT.


Silicon Standard SSM9510GM

E MAXIMUM RATINGS Symbol VDS VGS ID @ TA =25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu rrent Continuous Drain Current Pulsed D rain Current 1 3 3 Rating N-channel 30 ±20 6.9 5.5 30 2.0 0.016 -55 to 150 - 55 to 150 P-channel -30 ±20 -5.3 -4.2 -30 Units V V A A A W W/°C °C °C T otal Power Dissipation Lin.


Silicon Standard SSM9510GM

ear Derating Factor Storage Temperature Range Operating Junction Temperature Ra nge THERMAL DATA Symbol Rthj-a Paramet er Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 2/10/20 05 Rev.2.01 www.SiliconStandard.com 1 of 8 SSM9510GM N-channel Electrical C haracteristics @ Tj=25oC (unless otherw ise specified) Symbol BVDSS Parameter D rain-Source Breakdo.

Part

SSM9510GM

Description

N- and P-channel Enhancement-mode Power MOSFETs



Feature


SSM9510GM N- and P-channel Enhancement-m ode Power MOSFETs Simple drive require ment Lower gate charge Fast switching c haracteristics Pb-free; RoHS compliant. D2 D1 D2 D1 D1 D1 D2 N-CH BV DSS R D S(ON) ID G2 G2 S2 G1 S2 S1 G1 S1 30V 2 8mΩ 6.9A -30V 55mΩ -5.3A D1 D2 P-C H BVDSS RDS(ON) ID SO-8 DESCRIPTION w ww.DataSheet4U.com Advanced Power MOSF ETs from Silicon Stand.
Manufacture

Silicon Standard

Datasheet
Download SSM9510GM Datasheet




 SSM9510GM
SSM9510GM
N- and P-channel Enhancement-mode Power MOSFETs
Simple drive requirement
Lower gate charge
Fast switching characteristics
Pb-free; RoHS compliant.
DESCRIPTION
D2
D2
D1 D2
D1 D1
D1
SO-8
G2
S2G2
G1 S2
S1
S1
G1
N-CH
P-CH
BV DSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
28m
6.9A
-30V
55m
-5.3A
www.DaAtadSvheaentc4eUd.cPomower MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The SSM9510GM is in the SO-8 package, which is widely preferred for G1
commercial and industrial surface mount applications. It is well suited
for low voltage applications requiring complementary N and P MOSFETs.
D1
G2
S1
D2
S2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
30 -30
±20 ±20
6.9 -5.3
5.5 -4.2
30 -30
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
2/10/2005 Rev.2.01
www.SiliconStandard.com
1 of 8




 SSM9510GM
SSM9510GM
N-channel Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
BV DSS/ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=3A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
www.DataSheet4U.com Drain-Source Leakage Current (Tj=70oC)
IGSS Gate-Source Leakage
Qg Total Gate Charge2
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr Rise Time
td(off)
Turn-off Delay Time
VDS=10V, ID=5A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=6.9A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3, VGS=10V
tf Fall Time
RD=15
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
30 - - V
- 0.02 - V/°C
- - 28 m
- - 40 m
1 - 3V
- 4.6 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 10 16 nC
- 2 - nC
- 6 - nC
- 8 - ns
- 7 - ns
- 20 - ns
- 6 - ns
- 540 870 pF
- 160 - pF
- 120 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=6.9A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 20 - ns
- 11 - nC
2/10/2005 Rev.2.01
www.SiliconStandard.com
2 of 8




 SSM9510GM
SSM9510GM
P-channel Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-30 - - V
BV DSS/Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A
- -0.023 - V/°C
- - 55 m
VGS=-4.5V, ID=-3A
- - 90 m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
www.DaIGtaSSSheet4U.com Gate-Source Leakage
Qg Total Gate Charge2
Qgs Gate-Source Charge
Qgd
td(on)
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VDS=-10V, ID=-5A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ± 20V
ID=-5.3A
VDS=-24V
VGS=-4.5V
VDS=-15V
- 4.9 -
S
- - -1 uA
- - -25 uA
- - ±100 nA
- 9 15 nC
- 2 - nC
- 6 - nC
- 10 - ns
tr
td(off)
tf
Ciss
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
ID=-1A
RG=3.3,VGS=-10V
RD=10
VGS=0V
- 8 - ns
- 25 - ns
- 13 - ns
- 580 930 pF
Coss Output Capacitance
VDS=-25V
- 180 - pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 120 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.7A, VGS=0V
IS=-5.3A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 21 - ns
- 17 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board; 135°C/W when mounted on minimum copper pad.
2/10/2005 Rev.2.01
www.SiliconStandard.com
3 of 8



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