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SSM9563GM Dataheets PDF



Part Number SSM9563GM
Manufacturers Silicon Standard
Logo Silicon Standard
Description P-channel Enhancement-mode Power MOSFET
Datasheet SSM9563GM DatasheetSSM9563GM Datasheet (PDF)

www.DataSheet4U.com SSM9563GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9563GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM9563GM is supplied in an RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications. -40V 40mΩ -6A Pb-.

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www.DataSheet4U.com SSM9563GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9563GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM9563GM is supplied in an RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications. -40V 40mΩ -6A Pb-free; RoHS-compliant SO-8 D D D D G SO-8 S S S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current , TC = 25°C TC = 70°C Pulsed drain current 1 3 Value -40 ±25 -6 -4.8 -30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total power dissipation, TC = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘ JA Parameter Maximum thermal resistance, junction-ambient 3 Value 50 Units °C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board; 125°C/W when mounted on the minimum pad area required for soldering. 9/26/2006 Rev.3.01 www.SiliconStandard.com 1 of 5 SSM9563GM ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown voltage Breakdown voltage temperature coefficient (at Tj = 25°C, unless otherwise specified) Test Conditions VGS=0V, ID=-250uA Reference to 25°C, ID=-1mA VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A Min. -40 -1 Typ. -0.03 10 19 5 8 12 7 68 38 1600 240 190 Max. Units 40 60 -3 -1 -25 ±100 30 2560 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Static drain-source on-resistance2 VGS(th) gfs IDSS www.DataSheet4U.com Gate threshold voltage Forward transconductance VDS=VGS, ID=-250uA VDS=-10V, ID=-6A Drain-source leakage current VDS=-40V, VGS=0V, Tj = 25C VDS=-32V ,VGS=0V, Tj = 70°C VGS=±25V ID=-6A VDS=-32V VGS=-4.5V VDS=-20V ID=-1A RG=3.3Ω , VGS=-10V RD=20Ω VGS=0V VDS=-25V f=1.0MHz IGSS Qg Gate-source leakage current Total gate charge 2 Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-source charge Gate-drain ("Miller") charge Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward voltage 2 Test Conditions IS=-2A, VGS=0V IS=-6A, VGS=0V, dI/dt=100A/µs Min. - Typ. 37 54 Max. Units -1.2 V ns nC Reverse-recovery time 2 Reverse-recovery charge Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 9/26/2006 Rev.3.01 www.SiliconStandard.com 2 of 5 SSM9563GM 100 90 90 T A = 25 C o -10V -7.0V -ID , Drain Current (A) 80 TA=150 C o -10V -7.0V -ID , Drain Current (A) 80 7.


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