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Power MOSFET. SSM9563GM Datasheet

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Power MOSFET. SSM9563GM Datasheet






SSM9563GM MOSFET. Datasheet pdf. Equivalent




SSM9563GM MOSFET. Datasheet pdf. Equivalent





Part

SSM9563GM

Description

P-channel Enhancement-mode Power MOSFET



Feature


www.DataSheet4U.com SSM9563GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9563GM acheives fast switching p erformance with low gate charge without a complex drive circuit. It is suitabl e for low voltage applications such as DC/DC converters and general load-switc hing circuits. The SSM9563GM is supplie d in an RoHS-compl.
Manufacture

Silicon Standard

Datasheet
Download SSM9563GM Datasheet


Silicon Standard SSM9563GM

SSM9563GM; iant SO-8 package, which is widely used for medium power commercial and industr ial surface mount applications. -40V 4 0mΩ -6A Pb-free; RoHS-compliant SO-8 D D D D G SO-8 S S S ABSOLUTE MAX IMUM RATINGS Symbol VDS VGS ID IDM PD T STG TJ Parameter Drain-source voltage G ate-source voltage Continuous drain cur rent , TC = 25°C TC = 70°C Pulsed dra in current 1 3 Value .


Silicon Standard SSM9563GM

-40 ±25 -6 -4.8 -30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C ° C °C Total power dissipation, TC = 25 °C Linear derating factor Storage temp erature range Operating junction temper ature range THERMAL CHARACTERISTICS Sy mbol RΘ JA Parameter Maximum thermal r esistance, junction-ambient 3 Value 50 Units °C/W Notes: 1.Pulse width mus t be limited to avoid exc.


Silicon Standard SSM9563GM

eeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty c ycle <2%. 3.Mounted on a square inch of copper pad on FR4 board; 125°C/W when mounted on the minimum pad area requir ed for soldering. 9/26/2006 Rev.3.01 www.SiliconStandard.com 1 of 5 SSM956 3GM ELECTRICAL CHARACTERISTICS Symbol B VDSS Parameter Drain-source breakdown v oltage Breakdown vol.

Part

SSM9563GM

Description

P-channel Enhancement-mode Power MOSFET



Feature


www.DataSheet4U.com SSM9563GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9563GM acheives fast switching p erformance with low gate charge without a complex drive circuit. It is suitabl e for low voltage applications such as DC/DC converters and general load-switc hing circuits. The SSM9563GM is supplie d in an RoHS-compl.
Manufacture

Silicon Standard

Datasheet
Download SSM9563GM Datasheet




 SSM9563GM
www.DataSheet4U.com
SSM9563GM
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
-40V
40m
-6A
Pb-free; RoHS-compliant SO-8
D
D
D
D
SO-8
G
S
SS
DESCRIPTION
The SSM9563GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM9563GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current3, TC = 25°C
Pulsed drain current1
TC = 70°C
Total power dissipation, TC = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
Value
-40
±25
-6
-4.8
-30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient3
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board; 125°C/W when mounted on the minimum pad area required for soldering.
9/26/2006 Rev.3.01
www.SiliconStandard.com
1 of 5




 SSM9563GM
SSM9563GM
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
BV DSS/Tj
RDS(ON)
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance2
VGS(th)
gfs
IDSS
Gate threshold voltage
Forward transconductance
Drain-source leakage current
www.DIGaStSaSheet4U.comGate-source leakage current
Qg Total gate charge 2
Qgs Gate-source charge
Qgd Gate-drain ("Miller") charge
td(on)
Turn-on delay time 2
tr Rise time
td(off)
Turn-off delay time
tf Fall time
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
VGS=0V, ID=-250uA
Reference to 25°C, ID=-1mA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-6A
VDS=-40V, VGS=0V, Tj = 25C
VDS=-32V ,VGS=0V, Tj = 70°C
VGS=±25V
ID=-6A
VDS=-32V
VGS=-4.5V
VDS=-20V
ID=-1A
RG=3.3, VGS=-10V
RD=20
VGS=0V
VDS=-25V
f=1.0MHz
Min. Typ. Max. Units
-40 - - V
- -0.03 - V/°C
- - 40 m
- - 60 m
-1 - -3 V
- 10 -
S
- - -1 uA
- - -25 uA
- - ±100 nA
- 19 30 nC
- 5 - nC
- 8 - nC
- 12 - ns
- 7 - ns
- 68 - ns
- 38 - ns
- 1600 2560 pF
- 240 - pF
- 190 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward voltage 2
Reverse-recovery time2
Reverse-recovery charge
Test Conditions
IS=-2A, VGS=0V
IS=-6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 37 - ns
- 54 - nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
9/26/2006 Rev.3.01
www.SiliconStandard.com
2 of 5




 SSM9563GM
100
90 T A = 25 o C
80
-10V
-7.0V
70
60 -5.0V
50
-4.5V
40
30
20 V G = -3.0 V
10
0
0 2 4 6 8 10 12 14
-V DS , Drain-to-Source Voltage (V)
www.DataSheet4U.com
Fig 1. Typical Output Characteristics
50
46 I D = - 4 A
T A =25°C
42
38
34
30
26
3 5 7 9 11
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
6
SSM9563GM
90
80 T A = 1 5 0 o C
70
-10V
-7.0V
60
50 -5.0V
40
-4.5V
30
20 V G = -3.0 V
10
0
0 2 4 6 8 10 12 14
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
1.8 I D = - 6 A
V G =-10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
4
T j =150 o C
2
T j =25 o C
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V SD , Source-to-Drain Voltage (V)
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
9/26/2006 Rev.3.01
www.SiliconStandard.com
3 of 5



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