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P-Channel MOSFET. SSM9585GM Datasheet

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P-Channel MOSFET. SSM9585GM Datasheet






SSM9585GM MOSFET. Datasheet pdf. Equivalent




SSM9585GM MOSFET. Datasheet pdf. Equivalent





Part

SSM9585GM

Description

P-Channel MOSFET



Feature


SSM9585GM P-channel Enhancement-mode Pow er MOSFET Simple drive requirement Low er gate charge Fast switching character istics Pb-free; RoHS compliant. D BVD SS R DS(ON) ID -80V 180mΩ -2.7A G S DESCRIPTION D www.DataSheet4U.com Ad vanced Power MOSFETs from Silicon Stan dard provide the designer with the best combination of fast switching, ruggedi zed device design, l.
Manufacture

Silicon Standard

Datasheet
Download SSM9585GM Datasheet


Silicon Standard SSM9585GM

SSM9585GM; ow on-resistance and cost-effectiveness. D D D G The SSM9585GM is in the SO-8 package, which is widely preferred for commercial and industrial surface moun t applications. This device is suitable for low voltage applications such as D C/DC converters. SO-8 S S S ABSOLU TE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25° C TSTG TJ Parameter D.


Silicon Standard SSM9585GM

rain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Dra in Current Pulsed Drain Current 1 3 3 Rating -80 ±25 -2.7 -2.1 -20 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipatio n Linear Derating Factor Storage Temper ature Range Operating Junction Temperat ure Range THERMAL DATA Symbol RΘj-a P arameter Maximum Therma.


Silicon Standard SSM9585GM

l Resistance Junction-ambient 3 Value 5 0 Unit °C/W 3/21/2005 Rev.2.01 www. SiliconStandard.com 1 of 5 SSM9585GM ELECTRICAL CHARACTERISTICS (at Tj = 25 C, unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250 uA 2 Min. -80 -1 - Typ. -0.07 5 18 5 7 10 6 67 30 140 98 Max. Units 180 200 -3 -1 -25 ±100 28 V.

Part

SSM9585GM

Description

P-Channel MOSFET



Feature


SSM9585GM P-channel Enhancement-mode Pow er MOSFET Simple drive requirement Low er gate charge Fast switching character istics Pb-free; RoHS compliant. D BVD SS R DS(ON) ID -80V 180mΩ -2.7A G S DESCRIPTION D www.DataSheet4U.com Ad vanced Power MOSFETs from Silicon Stan dard provide the designer with the best combination of fast switching, ruggedi zed device design, l.
Manufacture

Silicon Standard

Datasheet
Download SSM9585GM Datasheet




 SSM9585GM
SSM9585GM
P-channel Enhancement-mode Power MOSFET
Simple drive requirement
Lower gate charge
Fast switching characteristics
Pb-free; RoHS compliant.
G
D
S
BVDSS
R DS(ON)
ID
DESCRIPTION
www.DataSAhedevta4nUc.ceodmPower MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
D
D
The SSM9585GM is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications. This device is suitable
for low voltage applications such as DC/DC converters.
SO-8
-80V
180m
-2.7A
G
S
S
S
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
RΘj-a
Parameter
Maximum Thermal Resistance Junction-ambient3
Rating
-80
±25
-2.7
-2.1
-20
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
3/21/2005 Rev.2.01
www.SiliconStandard.com
1 of 5




 SSM9585GM
SSM9585GM
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
BV DSS/Tj
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-2.7A
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
www.DataSheet4U.com Drain-Source Leakage Current (Tj=70oC)
IGSS Gate-Source Leakage
Qg Total Gate Charge2
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=-4.5V, ID=-2.5A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-2.7A
VDS=-80V, VGS=0V
VDS=-64V, VGS=0V
VGS=±25V
ID=-2.7A
VDS=-64V
VGS=-4.5V
VDS=-40V
ID=-1A
RG=3.3, VGS=-10V
RD=40
VGS=0V
VDS=-25V
f=1.0MHz
Min. Typ. Max. Units
-80 - - V
- -0.07 - V/°C
- - 180 m
- - 200 m
-1 - -3 V
-5-S
- - -1 uA
- - -25 uA
- - ±100 nA
- 18 28 nC
- 5 - nC
- 7 - nC
- 10 - ns
- 6 - ns
- 67 - ns
30 - ns
- 1790 2860 pF
- 140 - pF
- 98 - pF
SOURCE-DRAIN DIODE
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-2A, VGS=0V
IS=-2.7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 80 - ns
- 320 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us, duty cycle <2%.
3.Surface-mounted on 1 in2 copper pad on FR4 board; 125°C/W when mounted on minimum copper pad.
3/21/2005 Rev.2.01
www.SiliconStandard.com
2 of 5




 SSM9585GM
40
T A = 25 o C
35
30
25
-10V
-6.0V
-5.0V
-4.5V
20
15
10 V G = -3.0 V
5
0
0 4 8 12 16 20
-V DS , Drain-to-Source Voltage (V)
www.DataSheet4U.com
Fig 1. Typical Output Characteristics
SSM9585GM
30
TA=150oC
25
20
-10V
-6.0V
-5.0V
-4.5V
15
10
5 V G = -3.0 V
0
0 2 4 6 8 10 12 14
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
150
I D = -2.5 A
145 T A =25°C
140
135
130
125
3 4 5 6 7 8 9 10 11
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
6
2.2
2.0 I D = -2.7 A
1.8 V G =-10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
2.5
42
T j =150 o C
2
T j =25 o C
1.5
1
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V SD , Source-to-Drain Voltage (V)
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/21/2005 Rev.2.01
www.SiliconStandard.com
3 of 5



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