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N-Channel MOSFET. SSM95T07GP Datasheet

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N-Channel MOSFET. SSM95T07GP Datasheet






SSM95T07GP MOSFET. Datasheet pdf. Equivalent




SSM95T07GP MOSFET. Datasheet pdf. Equivalent





Part

SSM95T07GP

Description

N-Channel MOSFET



Feature


SSM95T07GP N-CHANNEL ENHANCEMENT MODE P OWER MOSFET PRODUCT SUMMARY Simple Driv e Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant D BVDSS RDS(ON) ID 75V 5mΩ 80A G S www.DataSheet4U.com DESCRIPTION The advanced power MOSFETs from Silicon Sta ndard Corp. provide the designer with t he best combination of fast switching, ruggedized device d.
Manufacture

Silicon Standard

Datasheet
Download SSM95T07GP Datasheet


Silicon Standard SSM95T07GP

SSM95T07GP; esign, low on-resistance and cost-effect iveness. The TO-220 package is universa lly preferred for all commercialindustr ial power applications and suited for l ow voltage applications such as DC/DC c onverters. G D TO-220(P) S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TC=2 5℃ ID@TC=100℃ IDM PD@TC=25℃ EAS T STG TJ Parameter Drain-Source Voltage G ate-Source Voltage Conti.


Silicon Standard SSM95T07GP

nuous Drain Current, VGS @ 10V Continuou s Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating 75 ±20 80 70 320 300 2 4 Units V V A A A W W/℃ mJ ℃ ℃ Total Power Dissipation Linear De rating Factor Single Pulse Avalanche En ergy Storage Temperature Range Operatin g Junction Temperature Range 450 -55 t o 175 -55 to 175 THERMAL DATA Symbol R thj-c Rthj-a Parameter Th.


Silicon Standard SSM95T07GP

ermal Resistance Junction-case Thermal R esistance Junction-ambient Max. Max. Va lue 0.5 62 Units ℃/W ℃/W 07/11/200 7 Rev.1.00 www.SiliconStandard.com 1 SSM95T07GP ELECTRICAL CHARACTERISTICS (TJ=25 C unless otherwise specified) S ymbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static D rain-Source On-Resistance2 Gate Thresho ld Voltage Forward Trans.

Part

SSM95T07GP

Description

N-Channel MOSFET



Feature


SSM95T07GP N-CHANNEL ENHANCEMENT MODE P OWER MOSFET PRODUCT SUMMARY Simple Driv e Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant D BVDSS RDS(ON) ID 75V 5mΩ 80A G S www.DataSheet4U.com DESCRIPTION The advanced power MOSFETs from Silicon Sta ndard Corp. provide the designer with t he best combination of fast switching, ruggedized device d.
Manufacture

Silicon Standard

Datasheet
Download SSM95T07GP Datasheet




 SSM95T07GP
SSM95T07GP
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
RoHS Compliant
D BVDSS
RDS(ON)
G ID
S
www.DaDtaSEheSeCt4UR.cIoPmTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial power applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
75V
5mΩ
80A
TO-220(P)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
75
±20
80
70
320
300
2
450
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/
mJ
Max.
Max.
Value
0.5
62
Units
/W
/W
07/11/2007 Rev.1.00
www.SiliconStandard.com
1




 SSM95T07GP
SSM95T07GP
ELECTRICAL CHARACTERISTICS
(TJ=25oC unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=60A
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
www.DIDaStSaSheet4U.comDrain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
IGSS Gate-Source Leakage
Qg Total Gate Charge2
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
VDS=VGS, ID=250uA
VDS=10V, ID=60A
VDS=75V, VGS=0V
VDS=60V ,VGS=0V
VGS= ±20V
ID=80A
VDS=40V
VGS=10V
VDS=40V
ID=80A
RG=3.3Ω,VGS=10V
RD=0.5Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
SOURCE-DRAIN DIODE
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=60A, VGS=0V
IS=40A, VGS=0V
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 169A.
4.Starting Tj=25oC , L=1mH , IAS=30A.
Min. Typ. Max. Units
75 - - V
- 0.01 - V/
- - 5 mΩ
2 - 4V
- 57 -
S
- - 10 uA
- - 250 uA
- - ±100 nA
- 85 135 nC
- 25 - nC
- 36 - nC
- 22 - ns
- 160 -
- 38 -
ns
ns
- 165 -
ns
- 4290 6870 pF
- 985 - pF
- 390 - pF
- 1.2 1.8 Ω
Min. Typ. Max. Units
- - 1.3 V
- 75 - ns
- 190 - nC
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
07/11/2007 Rev.1.00
www.SiliconStandard.com
2




 SSM95T07GP
SSM95T07GP
250
T C = 25 o C
200
150
10 V
9.0 V
8.0 V
7.0 V
100
V G = 6.0 V
50
0
0
www.DataSheet4U.com
123
V DS , Drain-to-Source Voltage (V)
4
Fig 1. Typical Output Characteristics
120
T C = 1 75 o C
100
80
10V
9.0V
8.0V
7.0V
V G = 6.0 V
60
40
20
0
0123
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
12
I D =30A
T C =25 o C
10
8
6
2.4
I D =60A
V G =10V
2.0
1.6
1.2
0.8
4
4 5 6 7 8 9 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
60
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
200
50
40
T j =175 o C
T j =25 o C
30
20
10
1.2
1
0.8
0.6
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.4
-50 0 50 100 150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
200
07/11/2007 Rev.1.00
www.SiliconStandard.com
3



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