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Power Transistor. 2SD557 Datasheet

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Power Transistor. 2SD557 Datasheet






2SD557 Transistor. Datasheet pdf. Equivalent




2SD557 Transistor. Datasheet pdf. Equivalent





Part

2SD557

Description

Silicon NPN Power Transistor



Feature


isc Silicon NPN Power Transistor 2SD557 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·High Collecto r Power Dissipation ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation APPLICATIONS ·Designed for high power audio amplif ier applications. ABSOLUTE MAXIMUM RAT INGS(Ta=25℃) SYMBOL P.
Manufacture

Inchange Semiconductor

Datasheet
Download 2SD557 Datasheet


Inchange Semiconductor 2SD557

2SD557; ARAMETER VALUE UNIT VCBO Collector-B ase Voltage 140 V VCEO Collector-Emi tter Voltage 140 V VEBO Emitter-Bas e Voltage 7 V IC Collector Current- Continuous 15 A ICM Collector Curre nt-Peak PC Collector Power Dissipatio n @TC=25℃ Tj Junction Temperature 20 A 120 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website www.iscsemi.com 1 isc & .


Inchange Semiconductor 2SD557

iscsemi is registered trademark isc Sil icon NPN Power Transistor ELECTRICAL C HARACTERISTICS Tj=25℃ unless otherwis e specified SYMBOL PARAMETER CONDITI ONS V(BR)CEO Collector-Emitter Breakdo wn Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC = 10A; IB= 1A VCE(sat)-2 Collector-Emi tter Saturation Voltage IC= 16A; IB= 4A VBE(on) Base-Emitt.


Inchange Semiconductor 2SD557

er On Voltage IC= 8A; VCE= 2V ICBO Co llector Cutoff Current VCB= 140V; IE= 0 IEBO Emitter Cutoff Current VEB= 7 V; IC= 0 hFE DC Current Gain IC= 5A; VCE= 4V 2SD557 MIN TYP. MAX UNIT 14 0 V 1.0 V 2.0 V 1.5 V 2.0 mA 5 .0 mA 30 NOTICE: ISC reserves the r ights to make changes of the content he rein the datasheet at any time without notification. The in.

Part

2SD557

Description

Silicon NPN Power Transistor



Feature


isc Silicon NPN Power Transistor 2SD557 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·High Collecto r Power Dissipation ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation APPLICATIONS ·Designed for high power audio amplif ier applications. ABSOLUTE MAXIMUM RAT INGS(Ta=25℃) SYMBOL P.
Manufacture

Inchange Semiconductor

Datasheet
Download 2SD557 Datasheet




 2SD557
isc Silicon NPN Power Transistor
2SD557
DESCRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.)
·High Collector Power Dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
20
A
120
W
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SD557
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 4A
VBE(on) Base-Emitter On Voltage
IC= 8A; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 4V
2SD557
MIN TYP. MAX UNIT
140
V
1.0
V
2.0
V
1.5
V
2.0 mA
5.0 mA
30
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







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