isc Silicon NPN Power Transistor
2SD557
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V...
isc Silicon
NPN Power
Transistor
2SD557
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.) ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
20
A
120
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 4A
VBE(on) Base-Emitter On Voltage
IC= 8A; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 4V
2SD557
MIN TYP. MAX UNIT
140
V
1.0
V
2.0
V
1.5
V
2.0 mA
5.0 mA
30
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