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Power MOSFET. CMT60N03G Datasheet

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Power MOSFET. CMT60N03G Datasheet






CMT60N03G MOSFET. Datasheet pdf. Equivalent




CMT60N03G MOSFET. Datasheet pdf. Equivalent





Part

CMT60N03G

Description

N-CHANNEL Logic Level Power MOSFET



Feature


CMT60N03G N-CHANNEL Logic Level Power MO SFET APPLICATION ‹ ‹ Buck Converter H igh Side Switch Other Applications VDSS 30V RDS(ON) Typ. 10.8mΩ ID 50A FEAT URES ‹ ‹ ‹ ‹ ‹ Low ON Resistance L ow Gate Charge Peak Current vs Pulse Wi dth Curve Inductive Switching Curves Im proved UIS Ruggedness PIN CONFIGURATIO N TO-252 TO-263 SYMBOL D Front View Front View D www.DataSheet.
Manufacture

Champion Microelectronic

Datasheet
Download CMT60N03G Datasheet


Champion Microelectronic CMT60N03G

CMT60N03G; 4U.com SOURCE DRAIN GATE G 1 2 3 S G 1 2 3 S N-Channel MOSFET ABSOLUTE MAX IMUM RATINGS Rating Drain to Source Vol tage (Note 1) Drain to Current - Cont inuous Tc = 25℃, VGS@10V (Note 2) - Continuous Tc = 100℃, VGS@10V (Note 2) - Pulsed Tc = 25℃, VGS@10V (Note 3) Gate-to-Source Voltage - Continue Total Power Dissipation Derating Facto r above 25℃ Peak Diode Recovery .


Champion Microelectronic CMT60N03G

dv/dt (Note 4) Operating Junction and St orage Temperature Range Single Pulse Av alanche Energy L=1.1mH,ID=30 Amps Maxim um Lead Temperature for Soldering Purpo ses Maximum Package Body for 10 seconds Pulsed Avalanche Rating dv/dt TJ, TSTG EAS TL TPKG IAS Symbol VDSS ID ID IDM VGS PD Value 30 50 Fig.3 Fig.6 ±20 52 0.5 3.0 -55 to 150 500 300 260 Fig.8 V W W/℃ V/ns ℃ mJ ℃ ℃.


Champion Microelectronic CMT60N03G

Unit V A THERMAL RESISTANCE Symbol Rθ JC RθJA RθJA Parameter Junction-to-ca se Junction-to-ambient (PCB Mount) Junc tion-to-ambient Min Typ Max 2.4 50 62 U nits ℃/W ℃/W ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ Minimum pad area, 2-oz copper, FR-4 cir cuit board, double sided 1 cubic foot c hamber, free air 2006/10/11 .

Part

CMT60N03G

Description

N-CHANNEL Logic Level Power MOSFET



Feature


CMT60N03G N-CHANNEL Logic Level Power MO SFET APPLICATION ‹ ‹ Buck Converter H igh Side Switch Other Applications VDSS 30V RDS(ON) Typ. 10.8mΩ ID 50A FEAT URES ‹ ‹ ‹ ‹ ‹ Low ON Resistance L ow Gate Charge Peak Current vs Pulse Wi dth Curve Inductive Switching Curves Im proved UIS Ruggedness PIN CONFIGURATIO N TO-252 TO-263 SYMBOL D Front View Front View D www.DataSheet.
Manufacture

Champion Microelectronic

Datasheet
Download CMT60N03G Datasheet




 CMT60N03G
APPLICATION
‹ Buck Converter High Side Switch
‹ Other Applications
VDSS
30V
RDS(ON) Typ.
10.8m
PIN CONFIGURATION
TO-252
Front View
TO-263
Front View
www.DataSheet4U.com
D
1 23
12 3
GS
CMT60N03G
N-CHANNEL Logic Level Power MOSFET
FEATURES
‹ Low ON Resistance
‹ Low Gate Charge
‹ Peak Current vs Pulse Width Curve
ID ‹ Inductive Switching Curves
50A ‹ Improved UIS Ruggedness
SYMBOL
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current Continuous Tc = 25, VGS@10V (Note 2)
Continuous Tc = 100, VGS@10V (Note 2)
Pulsed Tc = 25, VGS@10V (Note 3)
Gate-to-Source Voltage Continue
Total Power Dissipation
Derating Factor above 25
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=1.1mH,ID=30 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
Symbol
VDSS
ID
ID
IDM
VGS
PD
dv/dt
TJ, TSTG
EAS
TL
TPKG
IAS
Value
30
50
Fig.3
Fig.6
±20
52
0.5
3.0
-55 to 150
500
300
260
Fig.8
Unit
V
A
V
W
W/
V/ns
mJ
THERMAL RESISTANCE
Symbol
Parameter
RθJC
Junction-to-case
Min Typ
RθJA Junction-to-ambient
(PCB Mount)
RθJA Junction-to-ambient
Max
2.4
50
62
Units
/W
/W
/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +150
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 1




 CMT60N03G
CMT60N03G
N-CHANNEL Logic Level Power MOSFET
ORDERING INFORMATION
Part Number
CMT60N03GN252
CMT60N03GN263
Package
TO-252
TO-263
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Symbol
OFF Characteristics
Drain-to-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
VDSS
wwwB.rDeaaktdaoSwheneVto4lUta.gceomTemperature Coefficient, Fig.11
(Reference to 25, ID = 250 μA)
ΔVDSS/ΔTJ
Drain-to-Source Leakage Current
(VDS = 24 V, VGS = 0 V, TJ = 25)
(VDS = 24 V, VGS = 0 V, TJ = 125)
IDSS
Gate-to-Source Forward Leakage
(VGS = 20 V)
IGSS
Gate-to-Source Reverse Leakage
(VGS = -20 V)
IGSS
ON Characteristics
Gate Threshold Voltage,Fig.12
(VDS = VGS, ID = 250 μA)
VGS(th)
Static Drain-to-Source On-Resistance, Fig.9,10
(VGS = 10 V, ID = 15A)
(VGS = 4.5 V, ID = 12A)
(Note 5)
RDS(on)
Forward Transconductance (VDS = 15 V, ID = 12A) (Note 5)
gFS
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 15 V, VGS = 0 V,
f = 1.0 MHz)
Fig.14
Ciss
Coss
Crss
Total Gate Charge (VGS = 10 V)
Qg
Total Gate Charge (VGS = 4.5 V)
Gate-to-Source Charge
Gate-to-Drain Charge
(VDS = 15 V, ID = 12 A) (Note 6)
Fig.15
Qg
Qgs
Qgd
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 15 V, ID = 12 A,
VGS = 10 V,
RG = 1.0) (Note 6)
(VDD = 15 V, ID = 12 A,
VGS = 4.5V,
RG = 1.0) (Note 6)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Source-Drain Diode Characteristics
Continuous Source Current (Body
Diode Fig.16)
Integral pn-diode in MOSFET
IS
Pulse Source Current (Body Diode)
ISM
Forward On-Voltage
(IS = 12 A, VGS = 0 V)
VSD
Forward Turn-On Time
Reverse Recovery Charge
(IF = 12 A, VGS = 0 V,
di/dt = 100A/μs)
trr
Qrr
CMT60N03G
Min Typ Max
Units
30 V
27 mV/
μA
1
10
100 nA
-100
nA
1.0 3.0 V
m
10.8 12.5
15.4
28 S
1520
314
152
27.9
14
4.9
4.3
35
19
pF
pF
pF
nC
nC
nC
nC
10 ns
3.4 ns
36 ns
6.0 ns
16 ns
7.2 ns
34 ns
14 ns
50 A
Fig.6
A
1.0 V
25 38 ns
31 46 nC
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 2




 CMT60N03G
CMT60N03G
N-CHANNEL Logic Level Power MOSFET
Note 1: TJ = +25to 150
Note 2: Current is calculated based upon maximum allowable junction temperature.
Package current limitation is 30A.
Note 3: Repetitive rating; pulse width limited by maximum junction temperature.
Note 4: ISD = 12.0A, di/dt 100A/μs, VDD BVDSS, TJ = +150
Note 5: Pulse width 250μs; duty cycle 2%
Note 6: Essentially independent of operating temerpature.
www.DataSheet4U.com
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 3



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