CMT60N03G

CMT60N03G N-CHANNEL Logic Level Power MOSFET APPLICATION ‹ ‹ Buck Converter High Side Switch Other Applications VDSS 30V RDS(ON) Typ. 10.8mΩ ID 50A FEATURES ‹ ‹ ‹ ‹ ‹ Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Improved UIS Ruggedness PIN CONFIGURATION TO-252 TO-263 SYMBOL D Front View Front View D www.DataSheet4U.com SOURCE DRAIN GATE G 1 2 3 S G 1 2 3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current － Continuous Tc = 25℃, VGS@10V (Note 2) － Continuous Tc = 100℃, VGS@10V (Note 2) － Pulsed Tc = 25℃, VGS@10V (Note 3) Gate-to-Source Voltage － Continue Total Power Dissipation Derating Factor above 25℃ Peak Diode Recovery dv/dt (Note 4) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=1.1mH,ID=30 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating dv/dt TJ, TSTG EAS TL TPKG IAS Symbol VDSS ID ID IDM VGS PD Value 30 50 Fig.3 Fig.6 ±20 52 0.5 3.0 -55 to 150 500 300 260 Fig.8 V W W/℃ V/ns ℃ mJ ℃ ℃ Unit V A THERMAL RESISTANCE Symbol RθJC RθJA RθJA Parameter Junction-to-case Junction-to-ambient (PCB Mount) Junction-to-ambient Min Typ Max 2.4 50 62 Units ℃/W ℃/W ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ Minimum pad area, 2-oz copper, FR-4 circuit board, double sided 1 cubic foot chamber, free air 2006/10/11 Rev1.2 Champion Mic...