CMT60N03

CMT60N03 N-CHANNEL Logic Level Power MOSFET APPLICATION Buck Converter High Side Switch Other Applications VDSS 30V RDS(ON) Typ. 10.8mΩ ID 50A FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Improved UIS Ruggedness PIN CONFIGURATION TO-252 TO-263 SYMBOL D Front View Front View D www.DataSheet4U.com SOURCE DRAIN GATE G 1 2 3 S G 1 2 3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current ¡Ð ¡Ð ¡Ð Continuous Tc = 25¢J , VGS@10V (Note 2) Continuous Tc = 100¢J , VGS@10V (Note 2) Pulsed Tc = 25¢J , VGS@10V (Note 3) Continue Symbol VDSS ID ID IDM VGS PD dv/dt TJ, TSTG EAS TL TPKG IAS Value 30 50 Fig.3 Fig.6 ±20 52 0.5 3.0 -55 to 150 500 300 260 Fig.8 V W W/¢J V/ns ¢J mJ ¢J ¢J Unit V A Gate-to-Source Voltage ¡Ð Total Power Dissipation Derating Factor above 25¢J Peak Diode Recovery dv/dt (Note 4) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=1.1mH,ID=30 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating THERMAL RESISTANCE Symbol RθJC RθJA RθJA Parameter Junction-to-case Junction-to-ambient (PCB Mount) Junction-to-ambient Min Typ Max 2.4 50 62 Units ¢J /W ¢J /W ¢J /W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150¢J Minimum pad area, 2-oz copper, FR-4 circuit board, double sided 1 cubic foot chamber, free air 2004/05/24 Preliminary...