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Power MOSFET. CMT60N03 Datasheet

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Power MOSFET. CMT60N03 Datasheet






CMT60N03 MOSFET. Datasheet pdf. Equivalent




CMT60N03 MOSFET. Datasheet pdf. Equivalent





Part

CMT60N03

Description

N-CHANNEL Logic Level Power MOSFET



Feature


CMT60N03 N-CHANNEL Logic Level Power MOS FET APPLICATION Buck Converter High Sid e Switch Other Applications VDSS 30V RD S(ON) Typ. 10.8mΩ ID 50A FEATURES Lo w ON Resistance Low Gate Charge Peak Cu rrent vs Pulse Width Curve Inductive Sw itching Curves Improved UIS Ruggedness PIN CONFIGURATION TO-252 TO-263 SYMBO L D Front View Front View D www.Data Sheet4U.com SOURCE D.
Manufacture

Champion Microelectronic

Datasheet
Download CMT60N03 Datasheet


Champion Microelectronic CMT60N03

CMT60N03; RAIN GATE G 1 2 3 S G 1 2 3 S N-Chan nel MOSFET ABSOLUTE MAXIMUM RATINGS Ra ting Drain to Source Voltage (Note 1) D rain to Current ¡Ð ¡Ð ¡Ð Continuo us Tc = 25¢J , VGS@10V (Note 2) Contin uous Tc = 100¢J , VGS@10V (Note 2) Pul sed Tc = 25¢J , VGS@10V (Note 3) Conti nue Symbol VDSS ID ID IDM VGS PD dv/dt TJ, TSTG EAS TL TPKG IAS Value 30 50 Fi g.3 Fig.6 ±20 52 0.5 3.0 -5.


Champion Microelectronic CMT60N03

5 to 150 500 300 260 Fig.8 V W W/¢J V/n s ¢J mJ ¢J ¢J Unit V A Gate-to-Sour ce Voltage ¡Ð Total Power Dissipation Derating Factor above 25¢J Peak Diod e Recovery dv/dt (Note 4) Operating Jun ction and Storage Temperature Range Sin gle Pulse Avalanche Energy L=1.1mH,ID=3 0 Amps Maximum Lead Temperature for Sol dering Purposes Maximum Package Body fo r 10 seconds Pulsed Avala.


Champion Microelectronic CMT60N03

nche Rating THERMAL RESISTANCE Symbol R θJC RθJA RθJA Parameter Junction-to- case Junction-to-ambient (PCB Mount) Ju nction-to-ambient Min Typ Max 2.4 50 62 Units ¢J /W ¢J /W ¢J /W Test Condit ions Water cooled heatsink, PD adjusted for a peak junction temperature of +15 0¢J Minimum pad area, 2-oz copper, FR- 4 circuit board, double sided 1 cubic f oot chamber, free air 20.

Part

CMT60N03

Description

N-CHANNEL Logic Level Power MOSFET



Feature


CMT60N03 N-CHANNEL Logic Level Power MOS FET APPLICATION Buck Converter High Sid e Switch Other Applications VDSS 30V RD S(ON) Typ. 10.8mΩ ID 50A FEATURES Lo w ON Resistance Low Gate Charge Peak Cu rrent vs Pulse Width Curve Inductive Sw itching Curves Improved UIS Ruggedness PIN CONFIGURATION TO-252 TO-263 SYMBO L D Front View Front View D www.Data Sheet4U.com SOURCE D.
Manufacture

Champion Microelectronic

Datasheet
Download CMT60N03 Datasheet




 CMT60N03
APPLICATION
Buck Converter High Side Switch
Other Applications
VDSS
30V
RDS(ON) Typ.
10.8m
PIN CONFIGURATION
TO-252
Front View
TO-263
Front View
www.DataSheet4U.com
CMT60N03
N-CHANNEL Logic Level Power MOSFET
FEATURES
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
ID Inductive Switching Curves
50A Improved UIS Ruggedness
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current Continuous Tc = 25 , VGS@10V (Note 2)
Continuous Tc = 100 , VGS@10V (Note 2)
Pulsed Tc = 25 , VGS@10V (Note 3)
Gate-to-Source Voltage Continue
Total Power Dissipation
Derating Factor above 25
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=1.1mH,ID=30 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
Symbol
VDSS
ID
ID
IDM
VGS
PD
dv/dt
TJ, TSTG
EAS
TL
TPKG
IAS
Value
30
50
Fig.3
Fig.6
±20
52
0.5
3.0
-55 to 150
500
300
260
Fig.8
Unit
V
A
V
W
W/
V/ns
mJ
THERMAL RESISTANCE
Symbol
Parameter
RθJC
Junction-to-case
Min Typ
RθJA Junction-to-ambient
(PCB Mount)
RθJA Junction-to-ambient
Max
2.4
50
62
Units
/W
/W
/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +150
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
2004/05/24 Preliminary
Champion Microelectronic Corporation
Page 1




 CMT60N03
CMT60N03
N-CHANNEL Logic Level Power MOSFET
ORDERING INFORMATION
Part Number
CMT60N03N252
CMT60N03N263
Package
TO-252
TO-263
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25 .
Characteristic
Symbol
OFF Characteristics
Drain-to-Source Breakdown Voltage
(VGS = 0 V, ID = 250 A)
VDSS
wwwB.rDeaaktdaoSwheneVto4lUta.gceomTemperature Coefficient, Fig.11
(Reference to 25 , ID = 250 A)
VDSS/TJ
Drain-to-Source Leakage Current
(VDS = 24 V, VGS = 0 V, TJ = 25 )
(VDS = 24 V, VGS = 0 V, TJ = 125 )
IDSS
Gate-to-Source Forward Leakage
(VGS = 20 V)
IGSS
Gate-to-Source Reverse Leakage
(VGS = -20 V)
IGSS
ON Characteristics
Gate Threshold Voltage,Fig.12
(VDS = VGS, ID = 250 A)
VGS(th)
Static Drain-to-Source On-Resistance, Fig.9,10
(VGS = 10 V, ID = 15A)
(VGS = 4.5 V, ID = 12A)
(Note 5)
RDS(on)
Forward Transconductance (VDS = 15 V, ID = 12A) (Note 5)
gFS
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 15 V, VGS = 0 V,
f = 1.0 MHz)
Fig.14
Ciss
Coss
Crss
Total Gate Charge (VGS = 10 V)
Qg
Total Gate Charge (VGS = 4.5 V)
Gate-to-Source Charge
Gate-to-Drain Charge
(VDS = 15 V, ID = 12 A) (Note 6)
Fig.15
Qg
Qgs
Qgd
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 15 V, ID = 12 A,
VGS = 10 V,
RG = 1.0) (Note 6)
(VDD = 15 V, ID = 12 A,
VGS = 4.5V,
RG = 1.0) (Note 6)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Source-Drain Diode Characteristics
Continuous Source Current (Body
Diode Fig.16)
Integral pn-diode in MOSFET
IS
Pulse Source Current (Body Diode)
ISM
Forward On-Voltage
(IS = 12 A, VGS = 0 V)
VSD
Forward Turn-On Time
Reverse Recovery Charge
(IF = 12 A, VGS = 0 V,
di/dt = 100A/µs)
trr
Qrr
CMT60N03
Min Typ Max
Units
30 V
27 mV/
µA
1
10
100 nA
-100
nA
1.0 3.0 V
m
10.8 12.5
15.4
28 S
1520
314
152
27.9
14
4.9
4.3
35
19
pF
pF
pF
nC
nC
nC
nC
10 ns
3.4 ns
36 ns
6.0 ns
16 ns
7.2 ns
34 ns
14 ns
50 A
Fig.6
A
1.0 V
25 38 ns
31 46 nC
2004/05/24 Preliminary
Champion Microelectronic Corporation
Page 2




 CMT60N03
CMT60N03
N-CHANNEL Logic Level Power MOSFET
Note 1: TJ = +25 to 150
Note 2: Current is calculated based upon maximum allowable junction temperature.
Package current limitation is 30A.
Note 3: Repetitive rating; pulse width limited by maximum junction temperature.
Note 4: ISD = 12.0A, di/dt 100A/µs, VDD BVDSS, TJ = +150
Note 5: Pulse width 250µs; duty cycle 2%
Note 6: Essentially independent of operating temerpature.
www.DataSheet4U.com
2004/05/24 Preliminary
Champion Microelectronic Corporation
Page 3



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