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Power MOSFET. CMT60N06G Datasheet

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Power MOSFET. CMT60N06G Datasheet






CMT60N06G MOSFET. Datasheet pdf. Equivalent




CMT60N06G MOSFET. Datasheet pdf. Equivalent





Part

CMT60N06G

Description

N-CHANNEL Logic Level Power MOSFET



Feature


CMT60N06G N-CHANNEL Logic Level Power MO SFET APPLICATION ‹ ‹ ‹ DC motor cont rol UPS Class D Amplifier VDSS 60V RDS( ON) Typ. 15.8mΩ ID 60A FEATURES ‹ ‹ ‹ Low ON Resistance Low Gate Char ge Peak Current vs Pulse Width Curve In ductive Switching Curves PIN CONFIGURA TION TO-220 SYMBOL D Front View www. DataSheet4U.com GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET A.
Manufacture

Champion Microelectronic

Datasheet
Download CMT60N06G Datasheet


Champion Microelectronic CMT60N06G

CMT60N06G; BSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Curren t - Continuous Tc = 25℃, VGS@10V Continuous Tc = 100℃, VGS@10V - P ulsed Tc = 25℃, VGS@10V (Note 2) Gate -to-Source Voltage - Continue Total P ower Dissipation Derating Factor above 25℃ Peak Diode Recovery dv/dt (Note 3 ) Operating Junction and Storage Temper ature Range Single Pulse Avalanche.


Champion Microelectronic CMT60N06G

Energy L=144μH,ID=40 Amps Maximum Lead Temperature for Soldering Purposes Max imum Package Body for 10 seconds Pulsed Avalanche Rating dv/dt TJ, TSTG EAS TL TPKG IAS Symbol VDSS ID ID IDM VGS PD Value 60 60 43 241 ±20 150 1.0 4.5 -55 to 175 500 300 260 60 V W W/℃ V/ns mJ ℃ ℃ A Unit V A THERMAL RESIS TANCE Symbol RθJC RθJA Parameter Junc tion-to-case Junction-to-ambie.


Champion Microelectronic CMT60N06G

nt Min Typ Max 1.0 62 Units ℃/W ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction tempera ture of +175℃ 1 cubic foot chamber, f ree air 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 1 CM T60N06G N-CHANNEL Logic Level Power MOS FET ORDERING INFORMATION Part Number CM T60N06G Package TO-220 ELECTRICAL CHAR ACTERISTICS Unless other.

Part

CMT60N06G

Description

N-CHANNEL Logic Level Power MOSFET



Feature


CMT60N06G N-CHANNEL Logic Level Power MO SFET APPLICATION ‹ ‹ ‹ DC motor cont rol UPS Class D Amplifier VDSS 60V RDS( ON) Typ. 15.8mΩ ID 60A FEATURES ‹ ‹ ‹ Low ON Resistance Low Gate Char ge Peak Current vs Pulse Width Curve In ductive Switching Curves PIN CONFIGURA TION TO-220 SYMBOL D Front View www. DataSheet4U.com GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET A.
Manufacture

Champion Microelectronic

Datasheet
Download CMT60N06G Datasheet




 CMT60N06G
APPLICATION
‹ DC motor control
‹ UPS
‹ Class D Amplifier
VDSS
RDS(ON) Typ.
60V 15.8m
PIN CONFIGURATION
TO-220
Front View
www.DataSheet4U.com
CMT60N06G
N-CHANNEL Logic Level Power MOSFET
FEATURES
‹ Low ON Resistance
‹ Low Gate Charge
‹ Peak Current vs Pulse Width Curve
‹ Inductive Switching Curves
ID
60A
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current Continuous Tc = 25, VGS@10V
Continuous Tc = 100, VGS@10V
Pulsed Tc = 25, VGS@10V (Note 2)
Gate-to-Source Voltage Continue
Total Power Dissipation
Derating Factor above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=144μH,ID=40 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
Symbol
VDSS
ID
ID
IDM
VGS
PD
dv/dt
TJ, TSTG
EAS
TL
TPKG
IAS
Value
60
60
43
241
±20
150
1.0
4.5
-55 to 175
500
300
260
60
Unit
V
A
V
W
W/
V/ns
mJ
A
THERMAL RESISTANCE
Symbol
Parameter
RθJC
Junction-to-case
Min Typ
RθJA Junction-to-ambient
Max
1.0
62
Units
/W
/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +175
1 cubic foot chamber, free air
2006/03/07 Rev 1.1
Champion Microelectronic Corporation
Page 1




 CMT60N06G
ORDERING INFORMATION
Part Number
CMT60N06G
CMT60N06G
N-CHANNEL Logic Level Power MOSFET
Package
TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Symbol
OFF Characteristics
Drain-to-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
VDSS
wwwB.rDeaaktdaoSwheneVto4lUta.gceomTemperature Coefficient
(Reference to 25, ID = 250 μA)
ΔVDSS/ΔTJ
Drain-to-Source Leakage Current
(VDS = 60 V, VGS = 0 V, TJ = 25)
(VDS = 48 V, VGS = 0 V, TJ = 150)
Gate-to-Source Forward Leakage
(VGS = 20 V)
IDSS
IGSS
Gate-to-Source Reverse Leakage
(VGS = -20 V)
IGSS
ON Characteristics
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
VGS(th)
Static Drain-to-Source On-Resistance (Note 4)
(VGS = 10 V, ID = 60A)
Forward Transconductance (VDS = 15 V, ID = 60A)
(Note 4)
RDS(on)
gFS
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Gate-to-Source Charge
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
(VDS = 30 V, ID = 60 A,
VGS = 10 V) (Note 5)
Ciss
Coss
Crss
Qg
Qgs
Gate-to-Drain (“Miller”) Charge
Qgd
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 30 V, ID = 60 A,
VGS = 10 V,
RG = 9.1) (Note 5)
td(on)
trise
td(off)
tfall
Source-Drain Diode Characteristics
Continuous Source Current
(Body Diode)
Integral pn-diode in MOSFET
IS
Pulse Source Current (Body Diode)
ISM
Diode Forward On-Voltage
(IS = 60 A, VGS = 0 V)
VSD
Reverse Recovery Time
Reverse Recovery Charge
(IF = 60A, VGS = 0 V,
di/dt = 100A/μs)
trr
Qrr
Note 1: TJ = +25to +175
Note 2: Repetitive rating; pulse width limited by maximum junction temperature.
Note 3: ISD = 60A, di/dt <100A/μs, VDD < BVDSS, TJ = +175
Note 4: Pulse width < 250μs; duty cycle<2%
Note 5: Essentially independent of operating temerpature.
CMT60N06G
Min Typ Max
60
0.069
25
250
100
-100
1.0 2.0 3.0
15.8
36
1430
420
88
37.7
8.4
9.8
12.1
64
69
39
55
110
18
60
241
1.5
Units
V
mV/
μA
nA
nA
V
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
nC
2006/03/07 Rev 1.1
Champion Microelectronic Corporation
Page 2




 CMT60N06G
CMT60N06G
N-CHANNEL Logic Level Power MOSFET
www.DataSheet4U.com
2006/03/07 Rev 1.1
Champion Microelectronic Corporation
Page 3



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