CMT60N06G

CMT60N06G N-CHANNEL Logic Level Power MOSFET APPLICATION ‹ ‹ ‹ DC motor control UPS Class D Amplifier VDSS 60V RDS(ON) Typ. 15.8mΩ ID 60A FEATURES ‹ ‹ ‹ ‹ Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PIN CONFIGURATION TO-220 SYMBOL D Front View www.DataSheet4U.com GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current － Continuous Tc = 25℃, VGS@10V － Continuous Tc = 100℃, VGS@10V － Pulsed Tc = 25℃, VGS@10V (Note 2) Gate-to-Source Voltage － Continue Total Power Dissipation Derating Factor above 25℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=144μH,ID=40 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating dv/dt TJ, TSTG EAS TL TPKG IAS Symbol VDSS ID ID IDM VGS PD Value 60 60 43 241 ±20 150 1.0 4.5 -55 to 175 500 300 260 60 V W W/℃ V/ns ℃ mJ ℃ ℃ A Unit V A THERMAL RESISTANCE Symbol RθJC RθJA Parameter Junction-to-case Junction-to-ambient Min Typ Max 1.0 62 Units ℃/W ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175℃ 1 cubic foot chamber, free air 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 1 CMT60N06G N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number CMT60N06G Package TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ =...