KHB7D0N65F2

SEMICONDUCTOR TECHNICAL DATA General Description KHB7D0N65P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D0N65P1 A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V Qg(typ.)= 32nC 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + MAXIMUM RATING (Tc=25 www.DataSheet4U.com ) RATING 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB CHARACTERISTIC SYMBOL KHB7D0N65F1 UNIT KHB7D0N65P1 KHB7D0N65F2 650 30 7 7* 4.2* 28* 212 1.6 4.5 160 52 0.42 150 -55 150 mJ mJ V/ns Q KHB7D0N65F1 A F C Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VDSS VGSS ID 4.2 IDP EAS EAR dv/dt PD 1.28 Tj Tstg 28 V V O B E G DIM MILLIMETERS A K L M J R D N N H W W/ 1 2 3 A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 12.57 + 0.2 _ 0.1 0.5 +...