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A1084

Renesas Technology

2SA1084

2SA1084, 2SA1085 Silicon PNP Epitaxial REJ03G0635-0300 (Previous ADE-208-1007A) Rev.3.00 Aug.10.2005 Application Low fr...


Renesas Technology

A1084

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2SA1084, 2SA1085 Silicon PNP Epitaxial REJ03G0635-0300 (Previous ADE-208-1007A) Rev.3.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) www.DataSheet4U.com 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1084 –90 –90 –5 –100 100 400 150 –55 to +150 2SA1085 –120 –120 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.3.00 Aug 10, 2005 page 1 of 5 2SA1084, 2SA1085 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage www.DataSheet4U.com Gain bandwidth product Collector output capacitance Noise voltage referred to input Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob en 2SA1084 Min Typ Max –90 — — –90 –5 — — 250 — — — — — — — — — — — –0.6 90 3.5 0.5 — — –0.1 –0.1 800 –0.2 — — — — 2SA1085 Min Typ Max –120 — — –120 –5 — — 250 — — — — — — — — — — — –0.6 90 3.5 0.5 — — –0.1 –0.1 800 –0.2 — — — — Unit V V V µA µA Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, I...




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