EC4309C

Ordering number : ENA1215 EC4309C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4309C Features General-Purpose Switching Device Applications 1.5V drive. Halogen Free compliance (UL94 HB). Specifications www.DataSheet4U.com Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on glass epoxy substrate (145mm✕80mm✕1.6mm) Conditions Ratings --30 ±10 --200 --800 0.15 150 --55 to +150 Unit V V mA mA W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=--100μA VDS=-10V, ID=--100mA ID=-100mA, VGS=-4V ID=-50mA, VGS=-2.5V ID=-10mA, VGS=-1.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz --0.4 190 320 1.8 2.4 4.5 35 7.2 2.1 2.4 3.4 9.0 Ratings min --30 --1 ±10 --1.4 typ max Unit V μA μA V mS Ω Ω Ω pF pF pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard a...