2SK3447

2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous: ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features Capable of 4 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 10 V) www.DataSheet4U.com Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D G 1. Source 2. Drain 3. Gate 32 1 S Rev.7.00 Sep 07, 2005 page 1 of 6 2SK3447 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 150 ±20 1 4 1 0.9 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics www.DataSheet4U.com (Ta = 25°C) Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 150 ±20 — — 1.0 — — 0.5 — — — — — — — — — — — — Typ — — — — — 1.5 1.9 0.9 85 36 18 4.5 0.8 1.6 7 6 21 10 1.0 60 Max — — ±10 1 2.5 1.95 2.5 — — — — — — — — — — — 1.5 — Unit V V µA µA V Ω Ω S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 150 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 10 V Note 3 ID = 0.5 A, VGS = 4 V Note 3 ID = 0.5 A, VDS = 10 V Note 3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 100 V VGS = 10...