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H558 Dataheets PDF



Part Number H558
Manufacturers SHANTOU HUASHAN ELECTRONIC DEVICES
Logo SHANTOU HUASHAN ELECTRONIC DEVICES
Description NPN SILICON TRANSISTOR
Datasheet H558 DatasheetH558 Datasheet (PDF)

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. H558 ¨€ APPLICATIONS SWITCHING AND AMPLIFIER ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© TO-92 T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ www.DataSheet4U.com PC¡ª¡ªCollector Dissipation¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡500mW VCBO ¡ª¡ª Collector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-30V VCEO¡ ª ¡ ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-30V VE B O ¡ ª ¡ ªE.

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PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. H558 ¨€ APPLICATIONS SWITCHING AND AMPLIFIER ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© TO-92 T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ www.DataSheet4U.com PC¡ª¡ªCollector Dissipation¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡500mW VCBO ¡ª¡ª Collector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-30V VCEO¡ ª ¡ ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-30V VE B O ¡ ª ¡ ªEmitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-5V IC¡ ª ¡ ªCollector Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-100mA 1¨D Collector£¬ C 2¨D Base£¬ B 3¨D Emitter£¬ E ¨€ ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£© Characteristics Min Typ Max Unit Test Conditions Symbol BVCBO BVCEO BVEBO ICBO HFE VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) VBE(ON1) VBE(ON2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Output Capacitance - 30 - 30 -5 - 15 110 - 90 - 250 - 0.7 - 0.9 - 660 150 6 - 750 - 800 800 - 300 - 650 V V V nA IC=-100¦Ì A, IE=0 IC=-10mA, IB=0 IE=-100¦Ì A£¬ IC=0 VCB=-30V, IE=0 VCE=-5V, IC=-2mA mV IC=-10mA, IB=-0.5mA mV IC=-100mA, IB=-5mA V V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA mV VCE=-5V, IC=-2mA mV VCE=-5V, IC=-10mA MHz VCE=-5V,IC=-10mA,f=1MHz pF VCB=-10V, IE=0£¬ f=1MHz fT Cob ¨€ hFE Classification A 110¡ª 220 B 200¡ª 450 C 420¡ª 800 Shantou Huashan Electronic Devices Co.,Ltd. H558 www.DataSheet4U.com .


H557 H558 LTC1408-12


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