Document
PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
H558
¨€ APPLICATIONS
SWITCHING AND AMPLIFIER ¨€
ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£©
TO-92
T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ
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PC¡ª¡ªCollector Dissipation¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡500mW VCBO ¡ª¡ª Collector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-30V VCEO¡ ª ¡ ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-30V VE B O ¡ ª ¡ ªEmitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-5V IC¡ ª ¡ ªCollector Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-100mA 1¨D Collector£¬ C 2¨D Base£¬ B 3¨D Emitter£¬ E
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ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£©
Characteristics Min Typ Max Unit Test Conditions
Symbol
BVCBO BVCEO BVEBO ICBO HFE VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) VBE(ON1) VBE(ON2)
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Output Capacitance
- 30 - 30 -5 - 15 110 - 90 - 250 - 0.7 - 0.9 - 660 150 6 - 750 - 800 800 - 300 - 650
V V V nA
IC=-100¦Ì A, IE=0 IC=-10mA, IB=0 IE=-100¦Ì A£¬ IC=0 VCB=-30V, IE=0 VCE=-5V, IC=-2mA
mV IC=-10mA, IB=-0.5mA mV IC=-100mA, IB=-5mA V V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA
mV VCE=-5V, IC=-2mA mV VCE=-5V, IC=-10mA MHz VCE=-5V,IC=-10mA,f=1MHz pF VCB=-10V, IE=0£¬ f=1MHz
fT
Cob
¨€ hFE Classification A 110¡ª 220 B 200¡ª 450 C 420¡ª 800
Shantou Huashan Electronic Devices Co.,Ltd.
H558
www.DataSheet4U.com
.