ARF476FL

Common Source Push-Pull Pair D ARF476FL S D D S G S S G S S ARF476FL RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR Specified 150 Volt, 128 MHz Characteristics: Output Power = 900 Watts Peak Gain = 15dB (Class AB) www.DataSheet4U.com Efficiency = 50% min MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. (each device) D S G G S 165V 450W 150MHz The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz. Extended Flange - 3mm Creep Distance. High Voltage Breakdown and Large SOA for Superior Ruggedness. Low Thermal Resistance. All Ratings: TC = 25°C unless otherwise specified. ARF476FL UNIT Volts Amps Volts Watts °C 500 500 10 ±30 910 -55 to 175 300 STATIC ELECTRICAL CHARACTERISTICS (each device) Symbol BVDSS VDS(ON) IDSS IGSS g fs VGS(TH) ∆VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts 500 2.9 4 100 500 ±100 3 0.9 2 3.3 3.6 1.1 4 0.2 (I D(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0...