MRF9100SR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9100/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment. On–Die Integrated Input Match Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB — 110 Watts (Typ) Power Gain @ P1dB — 16.5 dB (Typ) Efficiency @ P1dB — 53% (Typ) Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness www.DataSheet4U.com Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9100 MRF9100R3 MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 (NI–780) (MRF9100) CASE 465A–06, STYLE 1 (NI–780S) (MRF9100SR3) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.5 175 1.0 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Bo...