MRF9120LR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9120/D The RF MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 26 volt base station equipment. Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 26 Watts Power Gain — 16 dB Efficiency — 26% Adjacent Channel Power — 750 kHz: - 45 dBc @ 30 kHz BW www.DataSheet4U.com 1.98 MHz: - 60 dBc @ 30 kHz BW Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW) Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 880 MHz, 120 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc. CASE 375B - 04, STYLE...