MRF9130LSR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9130L/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts Output Power @ P1dB — 135 Watts Power Gain — 16.5 dB @ 130 Watts Output Power Efficiency — 48% @ 130 Watts Output Power Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection www.DataSheet4U.com Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band, 130 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Low Gold Plating Thickness on Leads, 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 GSM/GSM EDGE 921 - 960 MHz, 130 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF9130LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9130LSR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissi...