MRF9135L

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9135L/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. Typical N–CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 25 Watts Avg. Power Gain — 17.8 dB Efficiency — 25% Adjacent Channel Power — 750 kHz: –47 dBc @ 30 kHz BW Internally Matched, for Ease of Use www.DataSheet4U.com High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. MRF9135L MRF9135LR3 MRF9135LSR3 880 MHz, 135 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF9135L CASE 465A–06, STYLE 1 NI–780S MRF9135LSR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC > = 25°C...