IS65LV256AL

IS65LV256AL IS62LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES High-speed access time: 20, 45 ns Automatic power-down when chip is deselected CMOS low power operation — 17 µW (typical) CMOS standby — 50 mW (typical) operating www.DataSheet4U.com TTL compatible interface levels Single 3.3V power supply Fully static operation: no clock or refresh required Three-state outputs Industrial and Automotive temperatures available Lead-free available ISSI MARCH 2006 ® DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 150 µW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62/65LV256AL is available in the JEDEC standard 28-pin SOJ, 28-pin SOP, and the 28-pin 450-mil TSOP package. FUNCTIONAL BLOCK DIAGRAM A0-A14 DECODER 32K x 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE OE WE CONTROL CIRCUIT Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at a...