2SC5976

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 2SC5976 High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 1 2 3 0.16±0.05 0.15 0.7±0.05 Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEX 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V DC IC Collector current Pulse ICP 3.0 A 5.0 Base current IB 0.3 A Collector power dissipation (t=10s) 1.00 PC (Note.1) W Total collector power dissipation (DC) 0.625 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C 1.Base 2.Emitter 3.Collector JEDEC JEITA TOSHIBA ― ― 2－3S1C 0～0.1 Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Re...