2SC5979

Ordering number : ENN8070 2SC5979 2SC5979 Applications NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features www.DataSheet4U.com Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings 100 100 50 6 5 7.5 1.2 0.8 15 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA 250 Conditions Ratings min typ max 0.1 0.1 400 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO repres...