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MRF5S9101NR1 Dataheets PDF



Part Number MRF5S9101NR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
Datasheet MRF5S9101NR1 DatasheetMRF5S9101NR1 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60.

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Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout = 50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain — 18 dB Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc www.DataSheet4U.com EVM — 2.3% rms • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 100 W CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S9101NR1 MRF5S9101NBR1 869 - 960 MHz, 100 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S9101NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S9101NBR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +15 427 2.44 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 80°C, 50 W CW Symbol RθJC Value (1,2) 0.41 0.47 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S9101NR1 MRF5S9101NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) www.DataSheet4U.com Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) Dynamic Characteristics (1) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW 1. Part internally input matched. (continued) Coss Crss — — 70 2.2 — — pF pF VGS(th) VGS(Q) VDS(on) gfs 2 — — — 2.8 3.7 0.21 7 3.5 — 0.3 — Vdc Vdc Vdc S Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit μAdc μAdc μAdc Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, Pout = 100 W, IDQ = 700 mA, f = 960 MHz Gps ηD IRL P1dB 16 56 — 100 17.5 60 - 15 110 19 — -9 — dB % dB W MRF5S9101NR1 MRF5S9101NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, Pout = 50 W Avg., IDQ = 650 mA, 869 - 894 MHz, 920 - 960 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps ηD EVM SR1 SR2 — — — — — 18 42 2.3 - 63 - 78 — — — — — dB % % rms dBc dBc www.DataSheet4U.com MRF5S9101NR1 MRF5S9101NBR1 RF Device Data Freescale Semiconductor 3 Z11 VBIAS C1 R1 R2 C4 C7 Z13 R3 C16 RF INPUT DUT Z10 Z9 C19 C10 Z8 Z7 C17 Z1 C11 C12 C15 C18 C20 C13 Z2 C14 Z3 Z4 Z5 Z6 RF OUTPUT C8 C5 C2 + C21 VSUPPLY Z12 www.DataSheet4U.com C9 C6 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.698″ 0.720″ 0.195″ 0.524″ 0.233″ 0.560″ 0.095″ 0.472″ 0.384″ x 0.827″ Microstrip x 0.788″ Microstrip x 0.087″ Microstrip x 0.087″ Microstrip x 0.087″ Micro.


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