Freescale Semiconductor Technical Data
Document Number: MRF18090B Rev. 7, 5/2006
RF Power Field Effect Transistors
N ...
Freescale Semiconductor Technical Data
Document Number: MRF18090B Rev. 7, 5/2006
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficiency — 45% (Typ) @ 90 Watts (CW) Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features Internally Matched for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection www.DataSheet4U.com Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF18090BR3 MRF18090BSR3
1.90 - 1.99 GHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETS
CASE 465B - 03, STYLE 1 NI - 880 MRF18090BR3
CASE 465C - 02, STYLE 1 NI - 880S MRF18090BSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 250 1.43 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C
Ta...
