NTP5426N

NTB5426N, NTP5426N, NVB5426N Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220 Features Low RDS(on) High Current Capability Avalanche Energy Specified AEC Q101 Qualified − NVB5426N These Devices are Pb−Free and are RoHS Compliant Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS $20 V Gate−to−Source Voltage − Nonrepetitive (TP < 10 ms) VGS 30 V Continuous Drain Steady TC = 25°C ID Current RqJC (Note 1) State TC = 100°C 120 A 85 Power Dissipation Steady TC = 25°C PD RqJC (Note 1) State 215 W Pulsed Drain Current tp = 10 ms IDM 260 A Operating and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 70 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds IS 60 A EAS 735 mJ TL 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) Steady State (Note 1) RqJC 0.7 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may ...