Document
DS25LV02
Low-Voltage 1024-Bit EPROM
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GENERAL DESCRIPTION
The DS25LV02 provides data storage and serial number identification for battery packs. The lowvoltage Dallas 1-WireÒ interface enables serial communication on a single battery contact and the 64-bit unique serial number allows multidrop networking and identification of individual devices. The 1024-bit EPROM memory is organized as 4 pages of 32 bytes each and supports storage of battery cell characteristics, charging voltage, current www.DataSheet4U.com and temperature parameters, as well as battery pack manufacturing data. CRC verification provides data integrity during communication. The EPROM pages are in-circuit writable and can be individually locked to protect data. The DS25LV02 is designed to be completely backward-compatible with the DS2502 for existing designs.
FEATURES
§ § § § § § § 128 Bytes of EPROM Storage Organized into Four Separately Lockable Pages Backward-Compatible with DS2502 Dallas 1-Wire Interface Input Logic Thresholds Compatible with 1.8V I/O Supply Rail Unique 64-Bit Serial Number Operates with VDD as Low as 2.2V Tiny, Thin SOT-23 Package
PIN CONFIGURATION
TOP VIEW
APPLICATIONS
Cell Phones/Smartphones Digital Cameras MP3 Players
TYPICAL APPLICATION CIRCUIT
5-Pin Thin-SOT (TSOT)
ORDERING INFORMATION
PART DS25LV02R+U DS25LV02R+T& R TEMP RANGE PIN-PACKAGE 5 Thin SOT 5 Thin SOT in Tape-and-Reel
-30°C to +85°C -30°C to +85°C
+Denotes lead-free package. 1-Wire is a registered trademark of Dallas Semiconductor. Certain commands, modes, and registers are capitalized for clarity.
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DS25LV02: Low-Voltage 1024-Bit EPROM
ABSOLUTE MAXIMUM RATINGS
Voltage Range on DQ, Relative to VSS Voltage Range on VDD, Relative to VSS Operating Temperature Range Storage Temperature Range Soldering Temperature -0.3V to +12V -0.3V to +6V -30°C to +85°C -55°C to +125°C See IPC/JEDEC J-STD-020A Specification
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device.
RECOMMENDED DC OPERATING CONDITIONS
(2.2V £ VDD £ 5.5V, TA = -30°C to +85°C.)
PARAMETER Supply Voltage
www.DataSheet4U.com Data Pin Communication Voltage
SYMBOL VDD VDQ VPP
CONDITIONS (Notes 1, 2) (Note 1) (Notes 1, 2, 5)
MIN 2.2 -0.3 11.5
TYP
MAX 5.5 +5.5 12.0
UNITS V V V
Data Pin Programming Voltage
DC ELECTRICAL CHARACTERISTICS
(2.2V £ VDD £ 5.5V, TA = -30°C to +85°C.)
PARAMETER Supply Current IDD1 Input-Logic High: DQ VIH VIL 0.4 Output-Logic Low: DQ Pulldown Current: DQ VOL IPD IOL = 4mA (Note 1) 0.5 0.4 V mA Communication mode, DQ active (Note 1) VDD ≥ 2.5V Input-Logic Low: DQ (Note 1) 1.5 0.6 V 300 SYMBOL IDD0 CONDITIONS DQ Idle (Note 4) MIN TYP 0.8 MAX 2 mA V UNITS
EPROM RELIABILITY SPECIFICATION
(2.2V £ VDD £ 5.5V, TA = -30°C to +85°C.)
PARAMETER Storage SYMBOL tEES CONDITIONS (Notes 2, 3) MIN 10 TYP MAX UNITS Years
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DS25LV02: Low-Voltage 1024-Bit EPROM
AC ELECTRICAL CHARACTERISTICS: EPROM PROGRAMMING
(3.0V £ VDD £ 5.5V, TA = -30°C to +50°C.)
PARAMETER Programming Pulse Width Program Voltage Rise Time Program Voltage Fall Time Programming Current: DQ Pin SYMBOL tPP tRP tFP IPP CONDITIONS (Notes 1, 2, 5, 6) (Notes 1, 2, 5) (Notes 1, 2, 5) (Notes 2, 5, 7) MIN 480 0.5 0.5 6 TYP MAX 5000 5.0 5.0 10 UNITS ms ms ms mA
AC ELECTRICAL CHARACTERISTICS: 1-Wire INTERFACE
(2.2V £ VDD £ 5.5V, TA = -30°C to +85°C.)
PARAMETER
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SYMBOL tSLOT tREC tLOW0 tLOW1 tRDV tRSTH tRSTL tPDH tPDL tDP tDV CDQ
CONDITIONS
MIN 60 1 60 1
TYP
MAX 120
UNITS ms ms
Time Slot
Recovery Time Write-0 Low Time Write-1 Low Time Read-Data Valid Reset-Time High Reset-Time Low Presence-Detect High Presence-Detect Low Delay to Program Pulse Delay to Verify DQ Capacitance
120 15 15
ms ms ms ms
480 480 15 60 5 5 50 960 60 240
ms ms ms ms ms pF
Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: Note 7:
All voltages are referenced to VSS. Programming of the EPROM Data and EPROM Status fields require a limited temperature range of 0°C to 50°C and limited VDD voltage range of 3.0V to 5.5V. Storage for tEES at +50°C. DQ < VIL for t > 1.5ms or DQ > VIH for t > 1.5ms [1-Wire oscillator shut down]. Programming pulse on DQ pin must be shaped to conform with rise, fall, and width timing specifications. See Figure 7. EPROM Programming Diagram). The accumulative duration of all programming pulses for each address must not exceed 5ms. Specification is guaranteed by design.
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DS25LV02: Low-Voltage 1024-Bit EPROM
PIN DESCRIPTION
PIN 1, 3 2 4 5 NAME N.C. No Connection Supply GND and Reference for Serial Communication. Attach VSS to battery-pack negative terminal. Supply Input. Bypass to VSS with 0.01mF (typ). Serial Interface Data I.