DatasheetsPDF.com

FQD6N60C Dataheets PDF



Part Number FQD6N60C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 600V N-Channel MOSFET
Datasheet FQD6N60C DatasheetFQD6N60C Datasheet (PDF)

FQD6N60C 600V N-Channel MOSFET QFET FQD6N60C 600V N-Channel MOSFET Features • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested www.DataSheet4U.com • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-st.

  FQD6N60C   FQD6N60C



Document
FQD6N60C 600V N-Channel MOSFET QFET FQD6N60C 600V N-Channel MOSFET Features • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested www.DataSheet4U.com • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D D ! ● ◀ ▲ ● ● G S D-PAK FQD Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current Parameter Drain-Source Voltage - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD6N60C 600 4 2.4 16 ± 30 300 4.0 8.0 4.5 80 0.78 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/°C °C °C Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---- Max 1.56 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQD6N60C Rev. A FQD6N60C 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQD6N60C FQD6N60C Device FQD6N60CTM FQD6N60CTF Package DPAK DPAK Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2500 2000 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------ -0.6 ----- --1 10 100 -100 V V/°C µA µA nA nA www.DataSheet4U.com I Gate-Body Leakage Current, Forward GSSF IGSSR Gate-Body Leakage Current, Reverse On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.0 A VDS = 40 V, ID = 2.0 A (Note 4) 2.0 --- -1.7 4.8 4.0 2.0 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---620 65 7 810 85 10 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 5.5 A, VGS = 10 V (Note 4, 5) (Note 4, 5) VDD = 300 V, ID = 5.5 A, RG = 25 Ω -------- 15 45 45 45 16 3.5 6.5 40 100 100 100 20 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 4.0 A VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs (Note 4) ------ ---310 2.1 4.0 16 1.4 --- A A V ns µC FQD6N60C Rev. A 2 www.fairchildsemi.com FQD6N60C 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 1 10 0 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 1 150 C -55 C 10 0 o o 25 C o 10 -1 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ www.DataSheet4U.com 10 -2 10 -1 10 0 10 1 10 -1 ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 6 RDS(ON) [Ω ], Drain-Source On-Resistance VGS = 10V 4 3 IDR, Reverse Drain Current [A] 5 10 .


SPD06N60C3 FQD6N60C L6920DC


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)