Document
FQD6N60C 600V N-Channel MOSFET
QFET
FQD6N60C
600V N-Channel MOSFET
Features
• 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested www.DataSheet4U.com • Improved dv/dt capability
®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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D-PAK
FQD Series
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current
Parameter
Drain-Source Voltage - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
FQD6N60C
600 4 2.4 16 ± 30 300 4.0 8.0 4.5 80 0.78 -55 to +150 300
Units
V A A A V mJ A mJ V/ns W W/°C °C °C
Thermal Characteristics
Symbol
RθJC RθJA RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient
Typ
----
Max
1.56 50 110
Units
°C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2005 Fairchild Semiconductor Corporation
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FQD6N60C Rev. A
FQD6N60C 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FQD6N60C FQD6N60C Device FQD6N60CTM FQD6N60CTF Package DPAK DPAK Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2500 2000
Electrical Characteristics
Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
600 ------
-0.6 -----
--1 10 100 -100
V V/°C µA µA nA nA
www.DataSheet4U.com I Gate-Body Leakage Current, Forward
GSSF
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.0 A VDS = 40 V, ID = 2.0 A
(Note 4)
2.0 ---
-1.7 4.8
4.0 2.0 --
V Ω S
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---620 65 7 810 85 10 pF pF pF
Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 5.5 A, VGS = 10 V
(Note 4, 5) (Note 4, 5)
VDD = 300 V, ID = 5.5 A, RG = 25 Ω
--------
15 45 45 45 16 3.5 6.5
40 100 100 100 20 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 4.0 A VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs
(Note 4)
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---310 2.1
4.0 16 1.4 ---
A A V ns µC
FQD6N60C Rev. A
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www.fairchildsemi.com
FQD6N60C 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
1
10
0
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
1
150 C -55 C
10
0
o
o
25 C
o
10
-1
※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃
www.DataSheet4U.com 10
-2
10
-1
10
0
10
1
10
-1
※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test
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4
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8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
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RDS(ON) [Ω ], Drain-Source On-Resistance
VGS = 10V
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3
IDR, Reverse Drain Current [A]
5
10
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