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MW6S010GNR1 Dataheets PDF



Part Number MW6S010GNR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Datasheet MW6S010GNR1 DatasheetMW6S010GNR1 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain — 18 dB Drain Efficiency — 32% IMD — - 37 dBc • Capable.

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Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain — 18 dB Drain Efficiency — 32% IMD — - 37 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability www.DataSheet4U.com • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MW6S010NR1 CASE 1265A - 02, STYLE 1 TO - 270- 2 GULL PLASTIC MW6S010GNR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 61.4 0.35 - 65 to +175 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 10 W PEP Symbol RθJC Value (1.2) 2.85 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MW6S010NR1 MW6S010GNR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A A III Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current www.DataSheet4U.com (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 125 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 0.3 Adc) Dynamic Characteristics Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss — — — 23 10 0.32 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1.5 — — 2.3 3.1 0.27 3 — 0.35 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps ηD IMD IRL 17.5 31 — — 18 32 - 37 - 18 20.5 — - 33 - 10 dB % dBc dB Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP, 420- 470 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps ηD IMD IRL — — — — 20 33 - 40 - 10 — — — — dB % dBc dB MW6S010NR1 MW6S010GNR1 2 RF Device Data Freescale Semiconductor B1 VBIAS + C2 + C3 C4 C6 C7 C10 C11 C12 C13 L1 RF OUTPUT + C15 C16 + C18 + C19 VSUPPLY RF INPUT R1 Z1 C1 Z2 Z3 Z4 DUT Z5 Z6 C20 Z7 C14 C5 C8 C9 C17 www.DataSheet4U.com Z1 Z2 Z3 Z4 0.073″ x 0.223″ Microstrip 0.112″ x 0.070″ Microstrip 0.213″ x 0.500″ Microstrip 0.313″ x 1.503″ Microstrip Z5 Z6 Z7 PCB 0.313″ x 0.902″ Microstrip 0.073″ x 1.080″ Microstrip 0.073″ x 0.314″ Microstrip Rogers ULTRALAM 2000, 0.031″, εr = 2.55 Figure 1. MW6S010NR1(GNR1) Test Circuit Schematic — 900 MHz Table 6. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 900 MHz Part B1 C1, C6, C11, C20 C2, C18, C19 C3, C16 C4, C15 C5, C8, C17 C7, C12 C9, C10, C13 C14 L1 R1 Ferrite Bead 47 pF Chip Capacitors 22 μF, 35 V Tantalum Capacitors 220 μF, 63 V Electrolytic Capacitors, Radial 0.1 μF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 24 pF Chip Capacitors 6.8 pF Chip Capacitors 7.5 pF Chip Capacitor 12.5 nH Inductor 1 kΩ Chip Resistor Description Part Number 2743019447 100B.


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