APT30M60J Datasheet

APT30M60J N-Channel MOSFET

APT30M60J 600V, 31A, 0.15Ω Max N-Channel MOSFET G S D SOT-227 S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ul.

Features

• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters Absolute Maximum Ratings Symbol Parameter ID Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C IDM Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 IAR Avalanche Current, Repetitive or Non-Repetitive Thermal and Mecha.