FGM75D06V1

F ine S P N F ineSiliconP ow erN etw orks Preliminary FGM75D06V1 VCES = 600V Ic = 75A VCE(ON) typ. = 1.9V @ Ic = 75A “HALF-BRIDGE” IGBT Features ▪ 10μs short circuit capability ▪ Low turn-off losses ▪ Short tail current Applications ▪ AC & DC motor controls ▪ General purpose inverters ▪ Optimized for high current inverter stages (AC TIG welding machines) ▪ Servo controls ▪ UPS ▪ Robotics Package : V1 www.DataSheet4U.com Absolute Maximum Ratings @ Tc = 25℃ (per leg) Symbol VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5 Test condition VGE = 0V, Rating 600 ± 20 Unit V V A A A A IC = 250μA TC = 70℃ (25℃) TC = 70℃ (25℃) TC = 70℃ (25℃) 75(100) 150(200) 70(90) 200 TC = 100℃ AC 1 minute 10 2500 -40 ~ 150 -40 ~ 125 190 3.5 3.5 μs V ℃ ℃ g Nm Nm Electrical Characteristics @ Tj = 25℃ (unless otherwise specified) Symbol V(BR)CES VCE(ON) VGE(th) ICES IGES VFM Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Min 600 3.0 - Typ 1.9 4.5 1.50 Max 2.3 6.0 500 ±100 ...