FQPF11N50CF

FQPF11N50CF — N-Channel QFET® FRFET® MOSFET FQPF11N50CF N-Channel QFET® FRFET® MOSFET 500 V, 11 A, 550 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features 11 A, 500 V, RDS(on) = 550 mΩ (Max.) @ VGS = 10 V, ID = 5.5 A Low Gate Charge (Typ. 43 nC) Low Crss (Typ. 20 pF) 100% Avalanche Tested Fast Recovery Body Diode D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RJC RJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Am...