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PG108 Dataheets PDF



Part Number PG108
Manufacturers Galaxy Semi-Conductor
Logo Galaxy Semi-Conductor
Description FAST RECOVERY RECTIFIER
Datasheet PG108 DatasheetPG108 Datasheet (PDF)

BL FEATURES Low cost GALAXY ELECTRICAL PG101---PG108 VOLTAGE RANGE: 100 --- 1000 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER DO - 41 Diffused junction Glass passivated junction Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA www.DataSheet4U.com Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band d.

  PG108   PG108


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BL FEATURES Low cost GALAXY ELECTRICAL PG101---PG108 VOLTAGE RANGE: 100 --- 1000 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER DO - 41 Diffused junction Glass passivated junction Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA www.DataSheet4U.com Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. PG 101 Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 PG 102 200 140 200 PG 103 300 210 300 PG 104 400 280 400 1.0 PG 105 500 350 500 PG 106 600 420 600 PG 107 800 560 800 PG 108 1000 700 1000 UNITS V V V A VRRM VRMS VDC IF(AV) 100 70 100 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 IFSM 30.0 A Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=125 VF IR t rr CJ Rθ JA TJ TSTG 150 1.3 5.0 100.0 250 12 55 - 55---- +175 - 55---- + 175 500 V A ns pF Maximum reverse recovery time (Note1) Typical junction capacitance Typical thermal resistance (Note2) (Note3) Operating junction temperature range Storage temperature range NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. www.galaxycn.com 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. Document Number 0261015 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES PG101---PG108 FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 50 N.1. 10 N.1. +0.5A D.U.T. (+) 50VDC (APPROX) (-) 1 N.1. ( - ) 0 -0.25A PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) ( + ) -1.0A NOTE S:1.R ISETIM E=75ns M AX. INP UT IM P E DANCE =1M .22pF 2.RISETIM E =10ns M AX. SOU RCEIM P E DAN CE =5O www.DataSheet4U.com FIG.2 --FORWARD CURRENT DERATING CURVE SE T TIM EBASEFOR 50/100 ns /cm 1cm FIG.3 --PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES 1.5 30 1.25 24 1.0 18 TJ =125 8.3ms Single Half Sine-Wave 0.75 Single Phase Half W ave 60H Z Resistive or Inductive Load 12 0.5 6 0.25 0 1 2 4 10 20 40 100 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, FIG.4-- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT AMPERES NUMBER OF CYCLES AT 60 Hz FIG.5-- TYPICAL JUNCTION CAPACITANCE 1 00 10 TJ=25 Pulse Width=300µS 10 JUNCTION CAPACITANCE,pF 16 14 4 2 1.0 0.4 0.2 0.1 0 .06 12 10 4 TJ=25 f=1MHz 2 1 .1 0 .02 0 .01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 .2 .4 1.0 2 4 10 20 40 100 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0261015 BLGALAXY ELECTRICAL 2. .


PG107 PG108 PPC405EZ


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