MRFG35003N6T1

Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications. Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power — 450 mWatts Power Gain — 9 dB Efficiency — 24% 3 Watts P1dB @ 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity N Suffix Indicates Lead - Free Terminations. RoHS Compliant. www.DataSheet4U.com In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35003N6T1 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate- Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS PD VGS Pin Tstg Tch TC Value 8 22.7 (2) 0.15 (2) -5 24 - 65 to +150 175 - 20 to +85 Unit Vdc W W/°C Vdc dBm °C °C °C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 6.6 (2) Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C 1. For rel...