PBLS2003S
20 V PNP BISS loadswitch
Rev. 01 — 3 August 2006 Product data sheet
1. Product profile
1.1 General description...
PBLS2003S
20 V
PNP BISS loadswitch
Rev. 01 — 3 August 2006 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor and
NPN ResistorEquipped
Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD) plastic package.
www.DataSheet4U.com 1.2
Features
I I I I I Low VCEsat (BISS)
transistor and resistor-equipped
transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count
1.3 Applications
I I I I Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
1.4 Quick reference data
Table 1. Symbol VCEO IC RCEsat Quick reference data Parameter collector-emitter voltage collector current collector-emitter saturation resistance collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio IC = −2 A; IB = −200 mA open base
[1]
Conditions open base
Min -
Typ 75
Max −20 −3 120
Unit V A mΩ
TR1;
PNP low VCEsat (BISS)
transistor
TR2;
NPN resistor-equipped
transistor VCEO IO R1 R2/R1
[1]
7 0.8
10 1
50 100 13 1.2
V mA kΩ
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
PBLS2003S
20 V
PNP BISS loadswitch
2. Pinning information
Table 2. Pin 1 2 3 4 5 6
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Pinning Description input (base) TR2 GND (emitter) TR2 base TR1 emitter TR1 collector TR1 collector TR1 output (collector) TR2 output (collector) TR2
4
...
