M65KA128AE

M65KA128AE 128Mbit (4 Banks x 2M x 16) 1.8 V Supply, Low Power SDRAM Features summary ■ 128Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2MWords, each 16 bits wide Synchronous Burst Read and Write – Fixed Burst Lengths: 1, 2, 4, 8 Words or www.DataSheet4U.com Full Page – Burst Types: Sequential and Interleaved. – Maximum Clock frequency: 133MHz – Clock Valid to Output Delay (CAS Latency): 3 at maximum clock frequency – Burst Control by Burst Stop and Precharge Command ■ ■ Supply Voltage – VDD = VDDQ = 1.7 to 1.95V Automatic and controlled Precharge Byte control by LDQM and UDQM Low-power features: – Partial Array Self Refresh (PASR), – Automatic Temperature Compensated Self Refresh (TCSR) – Driver Strength (DS) – Deep Power-Down Mode Auto Refresh and Self Refresh LVCMOS Interface compatible with multiplexed addressing Operating temperature range – − 25 to 90°C Wafer ■ ■ ■ ■ ■ ■ M65KA128AE IS ONLY AVAILABLE AS PART OF A MULTIPLE MEMORY PRODUCT August 2006 Rev 1 1/53 www.st.com 1 Contents M65KA128AE Contents 1 2 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 2.2 2.3 2.4 2.5 www.DataSheet4U.com Address Inputs (A0-A11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Bank Select Address Inputs (BA0-BA1) . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data In...