NTD4806N

NTD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices V(BR)DSS 30 V http://onsemi.com RDS(on) MAX 6.0 mW @ 10 V 9.4 mW @ 4.5 V D ID MAX 76 A Applications www.DataSheet4U.com CPU Power Delivery DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current tp=10ms Current Limited by Package TA = 25°C TA = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 "20 14 11 2.14 11 8.8 1.33 76 59 60 150 45 −55 to 175 50 6.0 220 W A A °C A V/ns mJ W A W Unit V V A N−Channel G S 4 4 4 A 1 2 3 CASE 369C DPAK (Bend Lead) STYLE 2 1 2 3 1 2 3 CASE 369AC CASE 369D 3 IPAK DPAK (Straight Lead) (Straight Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 06NG 4 Drain YWW 48 06NG 4 Drain Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 30 V, VGS = 10 V, L = 1.0 mH, IL(pk) = 21 ...