PolarHV Power MOSFET
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV ...
Description
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS
VDSS = 600 V ID25 = 30 A RDS(on) ≤ 240 m Ω
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg TL TSOLD FMCd Weight
Test Conditions
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque Mounting force
(TO-3P, TO-247) (PLUS220)
TO-247 TO-3P PLUS220 TO-268
Maximum Ratings
600 V TO-247 (IXTH)
600 V
±30 V
±40 V 30 A
G DS
80 A TO-3P (IXTQ)
30 A
50 mJ 1.5 J
10 V/ns
G DS
540 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 ° C 260 ° C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb.
6.0 g 5.5 g 4.0 g 5.0 g
TO-268 (IXTT)
G S
PLUS220 (IXTV)
G DS
PLUS220 (IXTV...S)
D (TAB)
D (TAB) D (TAB) D (TAB)
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.0 V
IGSS VGS = ±30 V, VDS = 0
±100 nA
IDSS
VDS = VDSS VGS = 0 V
TJ = 125° C
25 µA 250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
240 m Ω
G S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features l Fast Recovery diode l Unclamped Inductive Switching (UIS)
rated l ...
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