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Part Number IXTV30N60P
Manufacturers IXYS
Logo IXYS
Description PolarHV Power MOSFET
Datasheet IXTV30N60P DatasheetIXTV30N60P Datasheet (PDF)

  IXTV30N60P   IXTV30N60P
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS VDSS = 600 V ID25 = 30 A RDS(on) ≤ 240 m Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Mounting force (TO-3P, TO-247) (PLUS220) TO-247 TO-3P PLUS220 TO-268 Maximum Ratings 600 V TO-247 (IXTH) 600 V ±30 V ±40 V 30 A G DS 80 A TO-3P (IXTQ) 30 A 50 mJ 1.5 J 10 V/ns G DS 540 W -55 ... +150 150 -55 ... +150 °C °C °C 300 ° C 260 ° C 1.13/10 Nm/lb.in. 11..65/2.5..15 N/lb. 6.0 g 5.5 g 4.0 g 5.0 g TO-268 (IXTT) G S PLUS220 (IXTV) G DS PLUS220 (IXTV...S) D (TAB) D (TAB) D (TAB) D (TAB).



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