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IXFH22N60P Dataheets PDF



Part Number IXFH22N60P
Manufacturers IXYS
Logo IXYS
Description PolarHV HiPerFET Power MOSFETs
Datasheet IXFH22N60P DatasheetIXFH22N60P Datasheet (PDF)

www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated Preliminary Data Sheet IXFH 22N60P IXFT 22N60P VDSS ID25 = = RDS(on) ≤ ≤ trr 600 V 22 A 330 mΩ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs.

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www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated Preliminary Data Sheet IXFH 22N60P IXFT 22N60P VDSS ID25 = = RDS(on) ≤ ≤ trr 600 V 22 A 330 mΩ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 22 66 22 40 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C TO-247 (IXFT) G D D (TAB) S TO-268 (IXFT) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-247 TO-268 (TO-247) 300 250 1.13/10 Nm/lb.in. 6 5 g g Features z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 250 330 V V nA µA µA mΩ Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99315(02/05) IXFH 22N60P IXFT 22N60P www.DataSheet4U.com Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 15 21 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 305 38 20 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 Ω (External) 20 60 23 105 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 55 0.31 (TO-247) 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 22 66 1.5 A A V ns µC Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 26A -di/dt = 100 A/µs VR = 100V 250 1.0 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXFH 22N60P IXFT 22N60P www.DataSheet4U.com Fig. 1. Output Characteristics @ 25ºC 22 20 18 16 VGS = 10V 8V 45 40 35 VGS = 10V 9V 8V 7.5V Fig. 2. Extended Output Characteristics @ 25ºC I D - Amperes 7.5V I D - Amperes 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 30 25 20 15 10 7V 7V 6.5V 6V 6V 5 0 7 8 9 0 3 6 9 12 15 18 21 24 27 30 V D S - Volts Fig. 3. Output Characteristics @ 125ºC 22 20 18 16 VGS = 10V 8V 7V 3.4 3.1 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 11A I D = 22A I D - Amperes 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 5.5V 5V 6V 6.5V -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3 2.8 2.6 VGS = 10V TJ = 125º C 24 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 20 R D S ( o n ) - Normalized 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 35 40 45 TJ = 25º C 4 I D - Amperes 16 12 8 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes TC - Degrees Centigrade © 2005 IXYS All rights reserved IXFH 22N60P IXFT 22N60P www.DataSheet4U.com Fig. 7. Input Adm ittance 30 27 24 30 27 24 TJ = -40º C 25º C 125º C Fig. 8. Transconductance 18 15 12 9 6 3 0 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 125º C 25º C -40º C g f s - Siemens I D - Amperes 21 21 18 15 12 9 6 3 0 0 3 6 9 12 15 18 21 24 27 30 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 70 60 8 50 7 10 9 VDS = 300V I D = 11A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 25º C 0.8 0.9 1 1.1 40 30 TJ = 125º C 20 10 0 0.4 0.5 0.6 0.7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110 V S D - Volts Q G - nanoCoulombs Fig. 12. Forw.


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