Document
SiP41104
New Product
Vishay Siliconix
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Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion
FEATURES
D D D D D D 5-V Gate Drive Undervoltage Lockout Internal Bootstrap Diode PWM pin tristate enable feature Switching Frequency up to 1 MHz Drive MOSFETs In 4.5- to 50-V Systems
Pb-free Available
APPLICATIONS
D D D D D D Multi-Phase DC/DC Conversion High Current Synchronous Buck Converters High Frequency Synchronous Buck Converters Asynchronous-to-Synchronous Adaptations Mobile Computer DC/DC Converters Desktop Computer DC/DC Converters
DESCRIPTION
The SiP41104 is a high-speed half-bridge MOSFET driver for use in high frequency, high current, multiphase dc-to-dc synchronous rectifier buck power supplies. It is designed to operate at switching frequencies up to 1 MHz. The high-side driver is bootstrapped to allow driving n-channel MOSFETs. The SiP41104 comes with adaptive shoot-through protection to prevent simultaneous conduction of the external MOSFETs. The SiP41104 is available in both standard and lead (Pb)-free 8-Pin SOIC packages and is specified to operate over the industrial temperature range of −40 _C to 85 _C.
FUNCTIONAL BLOCK DIAGRAM
+5 to 50 V +5 V
VDD
BOOT
OUTH
SiP41104
Controller PWM
LX
VOUT
OUTL
GND
GND
GND
Document Number: 72706 S-50265—Rev. D, 21-Feb-05
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SiP41104
Vishay Siliconix
New Product
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V)
VDD, PWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V LX, BOOT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 V BOOT to LX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125_C Power Dissipationa SO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 770 mW Thermal Impedance (QJA)a SO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130_C/W Notes a. Device mounted with all leads soldered or welded to PC board. a. Derate 7.7 mW/_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE (ALL VOLTAGES REFERENCED TO GND = 0 V)
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5 V to 5.5 V VBOOT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5 V to 50 V CBOOT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 nF to 1 mF Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 85_C
SPECIFICATIONSa
Test Conditions Unless Specified Parameter Power Supplies
Supply Voltage Supply Quiescent Tristate Current VDD IDDQ IDDT fPWM = 1 MHz, CLOAD = 0 PWM = Open 4.5 2.5 500 5.5 3.5 1000 V mA mA
Limits Mina Typb Maxa Unit
Symbol
VDD = 5 V, VBOOT − VLX = 5 V, CLOAD = 3 nF TA = −40 to 85_C
Reference Voltage
Break-Before-Make VBBM 1 V
PWM Input
Input High Input Low Bias Current Tristate Threshold High Low VIH VIL IB VTSH VTSL tTST Rising or Falling 425 TA = 25_C 3.2 1.9 "700 4.0 VDD 0.5 "1400 V mA V ns
Tristate Shutdown Timeoutc
High-Side Undervoltage Lockout
Threshold VUVHS Rising or Falling 2.5 3.35 3.75 V
Bootstrap Diode
Forward Voltage VF IF = 10 mA, TA = 25_C 0.70 0.76 0.82 V
MOSFET Drivers
High-Side Drive Currentc Low-Side Drive Currentc High Side Driver Impedance High-Side Low Side Driver Impedance Low-Side IPKH(source) IPKH(sink) IPKL(source) IPKL(sink) RDH(source) RDH(sink) RDL(source) RDL(sink) VBOOT − VSH = 4.5 45V VDD = 4.5 45V VDD = 4.5 4 5 V, V SH = GND VDD = 4.5 45V 0.9 1.1 0.8 1.5 2.5 2.2 3.4 1.4 3.8 3.3 5.1 2.1 W A
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Document Number: 72706 S-50265—Rev. D, 21-Feb-05
SiP41104
New Product
SPECIFICATIONSa
Test Conditions Unless Specified Parameter MOSFET Drivers
High-Side Rise Time High-Side Fall Time High Side Propagation Delayc High-Side Low-Side Rise Time Low-Side Fall Time Low Side Propagation Delayc Low-Side trH tfH td(off)H td(on)H trL tfL td(off)L td(on)L 10% − 90% 90% − 10% See Timing Waveforms See Timing Waveforms 10% − 90% 90% − 10% See Timing Waveforms See Timing Waveforms 32 36 20 30 45 20 30 30 55 30 ns 40 45
Vishay Siliconix
www.DataSheet4U.com
Limits Mina Typb Maxa Unit
Symbol
VDD = 5 V, VBOOT − VLX = 5 V, CLOAD = 3 nF TA.