STF4N150

STP4N150 - STF4N150 www.DataSheet4U.com STW4N150 N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-220FP/TO-247 Very High Voltage PowerMESH™ MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STF4N150 STP4N150 STW4N150 s s s s s Figure 1: Package ID 4 A (*) 4A 4A Pw 40 W 160 W 160 W 3 1 2 VDSS 1500 V 1500 V 1500 V RDS(on) <7Ω <7Ω <7Ω TYPICAL RDS(on) = 5 Ω AVALANCHE RUGGEDNESS GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES HIGH SPEED SWITCHING 3 1 2 TO-220 TO-220FP DESCRIPTION Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. 3 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS s SWITCH MODE POWER SUPPLIES Table 2: Order Codes SALES TYPE STF4N150 STP4N150 STW4N150 MARKING F4N150 P4N150 W4N150 PACKAGE TO-220FP TO-220 TO-247 PACKAGING TUBE TUBE TUBE Rev. 1 March 2005 This is preliminary information on a new product now in development. Details are subject to change without notice. 1/9 STP4N150 - STF4N150 - STW4N150 Table 3: Absolute Maximum ratings Symbol Parameter STP4N150 STW4N150 www.DataSheet4U.com Value STF4N150 Unit VDS VDGR VGS ID ID IDM ( ) PTOT VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (...