Advance Technical Information
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PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 22N50P IXTV 22N50P IXTV 22N50PS
VDSS ID25
RDS(on)
= 500 V = 22 A = 270 mΩ
TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Mounting torque TO-3P PLUS220 & PLUS220SMD TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 350 -55 ... +150 150 -55 ... +150 300 260 W °C °C °C °C °C G D
D (TAB)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings 500 500 ± 30 22 66 22 30 750 10 V V V A A A mJ mJ V/ns G
D
S
(TAB)
PLUS220 (IXFV)
S
PLUS220SMD (IXFV-PS)
Md Weight
1.13/10 Nm/lb.in.
G
5.5 4
g g
G = Gate S = Source
S
D (TAB)
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µ.