IXTQ22N50P

Advance Technical Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Mounting torque TO-3P PLUS220 & PLUS220SMD TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 350 -55 ... +150 150 -55 ... +150 300 260 W °C °C °C °C °C G D D (TAB) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 500 500 ± 30 22 66 22 30 750 10 V V V A A A mJ mJ V/ns G D S (TAB) PLUS220 (IXFV) S PLUS220SMD (IXFV-PS) Md Weight 1.13/10 Nm/lb.in. G 5.5 4 g g G = Gate S = Source S D (TAB) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 10 5 50 V V nA µA µA D = Drain TAB = Drain Features z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 270 mΩ Advantages z z z Easy to mount Space savings High power density DS99351A(03/05) © 2005 IXYS All ri...