IXFK180N15P

Advance Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 180N15P VDSS ID25 = 150 V = 180 A RDS(on) ≤ 11 mΩ Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 180 75 380 60 100 4 10 800 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C TO-264 (IXFK) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 Advantages z z z 1.13/10 Nm/lb.in. 10 g Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 150 2.5 5.0 ±200 25 250 11 V V nA μA μA mΩ VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99373(03/05) IXFK 180N15P www.DataSheet4U.com Symbol Test Conditions Characteristic Values ...