IXFR102N30P

Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFR 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 60 A 36 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 60 250 60 60 2.5 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g z ISOPLUS247 (IXFR) E153432 G D S G = Gate S = Source D = Drain Features z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force 300 2500 22..130/5..29 5 Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 36 V V nA µA µA mΩ VGS = 10 V, ID = 51 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99247(03/05) IXFR 102N30P www.DataSheet4U.com Symbol Test Conditions Cha...