PolarHV HiPerFET Power MOSFET
Advance Technical Information
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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFH 22N5...
Description
Advance Technical Information
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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFH 22N50P IXFV 22N50P IXFV 22N50PS
VDSS ID25
RDS(on)
= 500 V = 22 A = 270 mΩ
Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings 500 500 ± 30 V V V A A A mJ mJ V/ns W °C °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
22 66 22 30 750 10 350 -55 ... +150 150 -55 ... +150
PLUS220 (IXFV)
G
D
S
D (TAB)
PLUS220SMD (IXFV-PS)
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Mounting torque TO-247 PLUS220 & PLUS220SMD
300 260
Md Weight
1.13/10 Nm/lb.in. 6 4 g g
G S D (TAB)
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 10 5 50 V V nA µA µA
G = Gate S = Source
D = Drain TAB = Drain
Features
z z
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
270 mΩ
Advantages
z z z
Easy to mount Space savings High power density
DS99358A(03/05)
© 2005 IXY...
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