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PBSS305PD
100 V, 2 A PNP low VCEsat (BISS) transistor
Rev. 01 — 30 May 2006 Product data sheet
1. ...
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PBSS305PD
100 V, 2 A
PNP low VCEsat (BISS)
transistor
Rev. 01 — 30 May 2006 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS305ND.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.3 Applications
I I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Thin Film
Transistor (TFT) backlight inverter Automotive applications
1.4 Quick reference data
Table 1. VCEO IC ICM RCEsat
[1] [2]
Quick reference data Conditions open base
[1]
Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance
Min [2]
Typ 88
Max −100 −2 −3 125
Unit V A A mΩ
single pulse; tp ≤ 1 ms IC = −2 A; IB = −200 mA
-
Device mounted on a ceramic PCB, Al2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
PBSS305PD
100 V, 2 A
PNP low VCEsat (BISS)
transistor
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2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector coll...