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IXGX120NC60C2 Dataheets PDF



Part Number IXGX120NC60C2
Manufacturers IXYS
Logo IXYS
Description HiPerFAST IGBT Lightspeed 2 Series
Datasheet IXGX120NC60C2 DatasheetIXGX120NC60C2 Datasheet (PDF)

ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT Lightspeed 2TM Series IXGK 120N60C2 IXGX 120N60C2 VCES IC110 VCE(sat) tfi(typ) = 600 V = 120 A = 2.5 V = 45 ns www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C (die limit) TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 4.7 Ω Clamped inductive load @ VCE .

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ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT Lightspeed 2TM Series IXGK 120N60C2 IXGX 120N60C2 VCES IC110 VCE(sat) tfi(typ) = 600 V = 120 A = 2.5 V = 45 ns www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C (die limit) TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 4.7 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 75 120 500 ICM = 200 830 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-264(IXGK) G C E (TAB) PLUS247(IXGX) W °C °C °C V~ V~ N/ib °C °C g g G C E (TAB) G = Gate E = Emitter C = Collector Tab = Collector 50/60 Hz, RMS, t = 1minute IISOL < 1 mA t = 20 seconds Clamping force 2500 3000 20..120/4.5..25 300 260 10 5 Maximum lead temperature for soldering (Note 3) Plastic body for 10 seconds TO-264 PLUS247 Features z Very high frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity Applications z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers Advantages z High power density z Very fast switching speeds for high frequency applications z High power surface mountable packages Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 600 3.0 TJ = 125°C 5.0 100 2 ± 200 TJ = 25°C TJ = 125°C 2.1 2.0 2.5 V V μA mA nA V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA, VGE = 0 V = 500 μA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = IT, VGE = 15 V Note 1 © 2005 IXYS All rights reserved DS99515 (12/05) IXGK 120N60C2 IXGX 120NC60C2 Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 50 50 75 11 VCE = 25 V, VGE = 0 V, f = 1 MHz 680 190 350 IC = IT, VGE = 15 V, VCE = 0.5 VCES 72 131 18 25 95 45 0.9 18 25 1.6 130 85 1.5 0.15 1.6 150 S nF pF pF nC nC nC Dim. TO-264 AA Outline www.DataSheet4U.com gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthJC IC = 60 A; VCE = 10 V, Note 1 Pins:1-Gate 2- Drain 3 - Source Tab - Drain Inductive load, TJ = 25°C IC = 80 A, VGE = 15 V VCE = 400 V, RG = Roff = 1.0 Ω ns ns ns ns mJ ns ns mJ ns ns mJ 0.15 K/W K/W Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Inductive load, TJ = 125°C IC = 80 A, VGE = 15 V VCE = 400 V, RG = Roff = 1.0 Ω A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T PLUS 247TM (IXGX) Outline Note: 1. Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %; 2. Test current IT = 100 A; 3. Temperature measured at 1.6 mm (0.062 in.) from case for 10 seconds Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 .


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