Document
ADVANCE TECHNICAL INFORMATION
HiPerFASTTM IGBT
Lightspeed 2TM Series
IXGK 120N60C2 IXGX 120N60C2
VCES IC110 VCE(sat) tfi(typ)
= 600 V = 120 A = 2.5 V = 45 ns
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Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C (die limit) TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 4.7 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 75 120 500 ICM = 200 830 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-264(IXGK)
G C E
(TAB)
PLUS247(IXGX)
W °C °C °C V~ V~ N/ib °C °C g g
G
C
E
(TAB)
G = Gate E = Emitter
C = Collector Tab = Collector
50/60 Hz, RMS, t = 1minute IISOL < 1 mA t = 20 seconds Clamping force
2500 3000 20..120/4.5..25 300 260 10 5
Maximum lead temperature for soldering (Note 3) Plastic body for 10 seconds TO-264 PLUS247
Features z Very high frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity Applications z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers Advantages z High power density z Very fast switching speeds for high frequency applications z High power surface mountable packages
Symbol
Test Conditions
Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 600 3.0 TJ = 125°C 5.0 100 2 ± 200 TJ = 25°C TJ = 125°C 2.1 2.0 2.5 V V μA mA nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 1 mA, VGE = 0 V = 500 μA, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = IT, VGE = 15 V Note 1
© 2005 IXYS All rights reserved
DS99515 (12/05)
IXGK 120N60C2 IXGX 120NC60C2
Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 50 50 75 11 VCE = 25 V, VGE = 0 V, f = 1 MHz 680 190 350 IC = IT, VGE = 15 V, VCE = 0.5 VCES 72 131 18 25 95 45 0.9 18 25 1.6 130 85 1.5 0.15 1.6 150 S nF pF pF nC nC nC
Dim.
TO-264 AA Outline
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gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthJC
IC = 60 A; VCE = 10 V, Note 1
Pins:1-Gate 2- Drain 3 - Source Tab - Drain
Inductive load, TJ = 25°C IC = 80 A, VGE = 15 V VCE = 400 V, RG = Roff = 1.0 Ω
ns ns ns ns mJ ns ns mJ ns ns mJ 0.15 K/W K/W
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
Inductive load, TJ = 125°C IC = 80 A, VGE = 15 V VCE = 400 V, RG = Roff = 1.0 Ω
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
PLUS 247TM (IXGX) Outline
Note: 1. Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %; 2. Test current IT = 100 A; 3. Temperature measured at 1.6 mm (0.062 in.) from case for 10 seconds
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
6,727,585 6,759,692 6771478 B2
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463
.